I. Avci, M.E. Law, E. Kuryliw & K.S. Jones, “Modeling the nucleation and evolution of end of range dislocation loops in silicon,” Electron Devices Meeting, 2001. IEDM Technical Digest. International, p. 38.2.1-4, December 2001.

L.S. Adam, M.E. Law, S. Hedge, & O. Dokumaci, “Comprehensive model for nitrogen diffusion in silicon,” Electron Devices Meeting, 2001. IEDM Technical Digest. International, p. 38.5.1-4, December 2001.

J.E. Sanchez, G. Bosman, & M.E. Law, “Device Simulation of generation-recombination noise under periodic large-signal conditions,” Electron Devices Meeting, 2001. IEDM Technical Digest. International, p. 21.1.1-4, December 2001.

Mark H. Clark, Kevin S. Jones, Tony E. Haynes, Charles J. Barbour, Kenneth G. Minor and Ebrahim Andideh, “The Role of Ion Mass on End-of-Range Damage in Shallow Preamorphizing Silicon,” Mat. Res. Soc. Symp. Proc., 669, J3.6.1-6, 2001.

Lahir Shaik Adam, Lance Robertson, Mark E. Law, Kevin Jones, Kevin Gable, Suri Hegde and Omer Dokumaci, “Diffusion of Implanted Nitrogen in Silicon at High Doses,” Mat. Res. Soc. Symp. Proc., 669, J3.10.1-6, 2001.

Susan Earles, Mark Law, Kevin Jones, Somit Talwar and Sean Corcoran, “Nonmelt Laser Annealing of 1 KeV Boron Implanted Silicon,” Mat. Res. Soc. Symp. Proc., 669, J4.1.1-5, 2001.

Ibrahim Avci, Mark E. Law, Craig Jasper, Hernan A. Rueda, & Rainer Thoma, “Modeling Threading Dislocation Loop Nucleation and Evolution in MeV Boron Implanted Silicon,” Mat. Res. Soc. Symp. Proc., 669, J4.4.1-6, 2001.

R. Brindos, K.S. Jones and M.E. Law, “Effect of Arsenic on Extended Defect Evolution in Silicon,” Mat. Res. Soc. Symp. Proc., 669, J5.2.1-6, 2001.

R. Brindos, M.H. Clark, K.S. Jones, M. Griglione, Hans-J. Gossmann, A. Agarwal, B. Murto and E. Andideh, “Influence of Arsenic Clustering and Precipitation on the Interstitial and Vacancy Concentration in Silicon,” Mat. Res. Soc. Symp. Proc., 669, J5.7.1-6, 2001.

Andres F. Gutierrez, Kevin S. Jones and Daniel F. Downey, “Defect Evolution from Low Energy, Amorphizing, Germanium Implants on Silicon,” Mat. Res. Soc. Symp. Proc., 669, J5.11.1-5, 2001.

Omer Dokumaci, Richard Kaplan, Mukesh Khare, Paul Ronsheim, Jay Burnham, Anthony Domenicucci, Jinghong Li, Robert Fleming, Lahir S. Adam & Mark E. Law, “Diffusion and Defect Structure in Nitrogen Implanted Silicon,” Mat. Res. Soc. Symp. Proc., 669, J6.4.1-6, 2001.

C.D. Lindfors, K.S. Jones and M.J. Rendon, “Boron Solubility Limits Following Low Temperature Solid Phase Epitaxial Regrowth,” Mat. Res. Soc. Symp. Proc., 669, J8.5.1-6, 2001.

C. Camarce, L. Radic, P. Keys, R. Brindos, K.S. Jones and M.E. Law, “Modeling of Dopant Defect Interactions,” Mat. Res. Soc. Symp. Proc., 669, J9.1.1-9, 2001.

Ibrahim Avci, Mark E. Law, Erik Kuryliw and Kevin S. Jones, “Modeling the Nucleation and Evolution of End of Range Dislocation Loops in Silicon,” IEDM Technical Digest, 835-838, 2001.

L.S. Robertson, J. Jacques, K.S. Jones, M.E. Law, D.F. Downey, M.J. Rendon and D. Sing, “Co-implantation of Boron and Fluorine in Silicon,” International Workshop on Junction Technology, Tokyo, Japan, November 2001.

Kevin S. Jones, Mark E. Law, Richard Brindos, and Patrick Keys, “TEM Studies of Ion Implantation Damage in ULSI Technology,” Microsc. Semicond. Mater. Conf., Oxford, March 2001.