Former PhD Students

Former PhD Students

Student

Employer

Dissertations

Jesse Johnson

Mainstream Engineering Inc.

 

Barbara Kazanowska

Applied Materials

Chemical Wet Etching of Al(X)Ga(1-X)N Nanostructures

Emily Turner

 

Investigation of Si Quantum Dot Formation via High-Temperature Oxidation of Si/SiGe Nanostructures

Gibson Scisco

University of Maryland

Templated Carbon Nanotube Electrodes for On-Chip Electrochemical Double Layers Capacitors

Katherine Haynes

Lam Research

Defect Evolution During Elevated-Temperature Helium Implantation Into Silicon

David Brown

Air Force Research Lab

Phase Properties of Semiconductor and Transition Metal Materials from Experimental and Computational Principles

Zach Weinrich

Intel

Dopant-Defect Interactions In Epitaxially Grown Highly Doped Si:P

Will Brewer

Micron

Investigation Of Si/SiGe FinFETS And Vertically Stacked Nanowires Via Atom Probe Tomography

Caleb Barrett

Intel

Investigation of Antiphase Domain Boundary Energetics in GaAs-ON-Si(001)

Ethan Kennon

Keysight Tech.

Behavior of Highly Te doped InGaAs

Ryan Murray

IMEC San Francisco

The Effect of Ion Implantation on the Structural and Electronic Properties of Molybdenum Disulfide

Tom Martin

University of Wyoming

Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials

Henry Aldridge

Global Foundries

Continuum Modelling of Silicon Diffusion In Indium Gallium Arsenide

Aaron Lind

Intel

“Dopant-Defect Interactions in Si Doped InGaAs”

Nick Vito

FEI

“Studies on the Role of the Substrate Interface for Germanium and Silicon Lithium Ion Battery Anodes”

Brad Yates

Intel

“Implantation and activation of ultra-shallow boron in germanium”

Blake Darby

Intel

“Amorphization and solid phase epitaxial growth of germanium”

Sidan Jin

Intel

“Boron activation and diffusion in polycrystalline silicon with flash-assist rapid thermal annealing”

Daniel Gostovic

HP

“A multi-length scale approach to correlating solid oxide fuel cell porous cathode microstructure to electrochemical performance”

Nicholas G. Rudawski

Univ. of Florida

“Stressed solid-phase epitaxial growth of silicon”

J. Samuel Moore

Intel

“Influence of germanium concentration and homogeneous boron doping on microstructure, kinetics, and sheet resistance of nickelgermanosilicide thin films”

Michelle Phen

Intel

“Strain relaxation and solid phase epitaxial regrowth in ion implanted strained silicon and strained silicon germanium”

Aijie Chen

Case Western University

“Effect of cathode microstructure on cathode polarization in sintered strontium-doped lanthanum manganite/yttria stabilized zirconia solid oxide fuel cells”

Diane Hickey

Advanced Diamond Technologies

“Ion implantation induced defect formation and amorphization in the group IV semiconductors: diamond, silicon and germanium”

Renata Camillo-Castillo

IBM

“Boron activation and diffusion in silicon for varying initial process conditions during flash-assist rapid thermal annealing”

Jeanette Jacques

DRS Technologies

“Boron diffusion within amorphous silicon materials”

Robert Crosby

Intel

“Evolution of self-interstitials induced by ion-implantation in SiGe alloys”

Antonio Saavedra

Intel

“Interfacial phenomena in ion implanted silicon-on-insulator materials”

Robert R. Robison

Intel

“Simulation of fluorine diffusion behavior and boron-fluorineco-interaction in silicon”

Kevin Gable

DRS Technologies

“Boron activation and diffusion during millisecond annealing of ion-implanted silicon”

Mark Clark

Twincreeks

“Laser thermal processing of novel doping schemes in silicon”

Erik Kuryliw

Intel

“Analyzing the thermal annealing behavior of laser thermal processed silicon”

Chad Lindfors

Intel

“Low temperature solid phase epitaxial regrowth of ion implanted boron in silicon”

Aaron Lilak

Intel

“Analysis and modeling of transient phenomena in boron-doped silicon”

Lance Robertson

DRS Technologies

“Diffusion of ion implanted boron in silicon: the effects of lattice defects and co-implanted impurities”

Richard Brindos

Intel

“Determination and modeling of the interaction between arsenic and silicon interstitials in silicon”

Patrick Keys

Intel

“Phosphorus-defect interactions during thermal annealing of ion implanted silicon”

Gopalakrishnan Subramanian

 

“Atomistic simulation studies of defect formation, migration and stability in ion-implanted silicon”

Qing Zhai

Varian Semiconductor

“Effects of co-dopants on the microstructure and electroluminescence of ZnS:Mn thin film phosphors”

Sushil Bharatan

Analog Devices

“Extraction of point defect parameters by quantitative transmission electron microscopy”

Sharon Cobb

NASA

“Microstructural development during the directional solidification of mercury zinc selenide alloys”

Ranju Datta

 

“The effect of implantation conditions on microstructural evolution in oxygen implanted silicon”

Ananth Naman

Cabot Corporation

“Characterization of the phosphor layer microstructure and its effects on the electroluminescent properties of thin-film electroluminescent devices”

Scott B. Herner

Twincreeks

“Point defects in silicon with a titanium disilicide film and vacancy/extrinsic dislocation loop interaction”

Jinning Liu

IBM

“Defect and diffusion study in boron implanted silicon”

Jong Ryul Kim

 

“Study of electrical degradation of II-VI ZnSe-based single quantum-well light-emitting devices”

Christopher J. Santana

RF Microdevices

“Nucleation and growth of AlGaP on silicon by metal-organic molecular beam epitaxy”

Jengyi Yu

Novellus Systems

“Low-pressure metalorganic chemical vapor deposition of thin zinc sulfide phosphor layers with modulation doping for thin film electroluminescent devices”

David Venables

 

“Defect formation and evolution in high dose oxygen implanted silicon”