J. S. Moore, E. Kuryliw, K. S. Jones, and R. Ulfig, “Developing local electrode atom probe as a method of profiling dopants in silicon,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
R. A. Camillo-Castillo, M. E. Law, K. S. Jones, R. Lindsay, K. Maex, B. J. Pawlak, and S. McCoy, “Effect of varying the initial conditions prior to flash-assisted rapid thermal processing on dopont activation, diffusion, and defect populations,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
M. S. Phen, R. T. Crobsy, V. Craciun, and K.S. Jones, “Solid phase recrystallization and strain relaxation in strained Si on SiGe,” International Workshop Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
L. Radic, A. F. Saavedra, K. S. Jones, M. E. Law, “Modeling of B diffusion in the presence of Ge,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
D. Zeenberg and K. S. Jones, “The effect of non-melt laser annealing on pre-amorphized silicon,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
R. T. Crosby, K. S. Jones, M. E. Law, and L. Radic, “Correlation between B diffusion and clustering in Si0.77Ge0.23,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
J. M. Jacques, S. D. Maslov, E. Kuryliw, M. S. Phen, and K. S. Jones, “Structural relaxation effects upon boron diffusion during SPER,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
R. R. Robison and M. E. Law, “Simulation of boron-fluorine co-diffusion behavior,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2005).
M. S. Phen, R. T. Crosby, V. Craciun, K. S. Jones, M. E. Law, J. L. Hansen, and A. N. Larsen, “Solid phase recrystallization and strain relaxation in ion-implanted strained Si on SiGe heterostructures,” Materials Research Society Spring Meeting (2005).
J. M. Jacques, T. Y. Tsui, A. J. McKerrow, and R. Kraft, “Fracture property improvements of a nanoporous thin film via post deposition bond modifications,” Materials Research Society Spring Meeting (2005).