N. G. Rudawski and K. S. Jones, “Stressed solid-phase epitaxial growth of Si and related materials,” (Invited Presentation) European Materials Research Society Spring Meeting (2009).

S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, “Effect of n- and p- type dopants on amorphous regrowth,” International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (2009).

S. Jin, K. S. Jones, P. Ronsheim, and M. Hatzistergos “Boron lateral diffusion on SOI using 3D atom probe tomography,” International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling (2009).

L. Romano, N. G. Rudawski, M. R. Holzworth, K. S. Jones, S. Choi, and S. T. Picraux, “Manipulation and deformation of Ge nanowires by ion-irradiation,” Materials Research Society Spring Meeting (2009).