R. Raman, M. E. Law, V. Krishnamoorthy, K. S. Jones, and S.B. Herner, “Effect of surface proximity on end-of-range loop dissolution in silicon,” Appl. Phys. Lett. 74, 1591 (1999).

R. Raman, M. E. Law, V. Krishnamoorthy, and K. S. Jones, “Effect of the end-of-range loop layer depth on the evolution of {311} defects,” Appl. Phys. Lett., 74, 700 (1999).

A. D. Lilak, S. K. Earles, M. E. Law, and K.S. Jones, “Evolution of {311} type defects in boron-doped structures: experimental evidence of boron-interstitial cluster formation,” Appl. Phys. Lett. 74, 2038 (1999).

R. E. Brindos, P. H. Keys, K. S. Jones, and M. E. Law, “Effect of arsenic doping on {311} defect dissolution in silicon,” Appl. Phys. Lett. 75, 229 (1999).

C. Jasper, A. Hoover, and K. S. Jones, “The effect of implantation, energy, and dose on extended defect formation for MeV phosphorus implanted silicon,” Appl. Phys. Lett. 75, 2629 (1999).

K. S. Jones, H. Banisaukas, J. Glassberg, E. Andideh, C. Jasper, A. Hoover, A. Agarwal, and M. Rendon, “Transient enhanced diffusion after laser thermal processing of ion implanted silicon,” Appl. Phys. Lett. 75, 3659 (1999).

L. S. Robertson, M. E. Law, K. S. Jones, L. M. Rubin, J. Jackson, P. Chi, and D. S. Simmons, “Correlation of end-of-range damage evolution and transient enhanced diffusion of boron in regrown silicon,” Appl. Phys. Lett. 75, 3844 (1999).