F. C. Hou, G. Bosman, and M. E. Law, “Characterization of generation-recombination noise Using a physics based device noise simulator,” Microelectron. Reliab. 40, 1883 (2000).

Y. Haddara, B. T. Folmer, M. E. Law, and T. Buyuklimanli, “Accurate measurements of the intrinsic diffusivities of boron and phosphorus in silicon,” Appl. Phys. Lett. 77, 1976 (2000).

M. E. Law, G. H. Gilmer, and M. Jarai, “Simulation of defects and diffusion phenomena in silicon,” Mater. Res. Soc. Bull. 25, 45 (2000).

L. S. Adam, M. E. Law, K. S. Jones, O. Dokumaci, C. S. Murthy, and S. Hegde, “Diffusion of implanted nitrogen in silicon,” J. Appl. Phys. 87, 2282 (2000).

D. A. Cole, J. R. Shallenberger, S. W. Novak, R. L. Moore, M. J. Edgell, S. P. Smith, C. J. Hitzman, J. F. Kirchhoff, E. Principe, W. Nieveen, F. K. Huang, S. Biswas, R. J. Bleiler, and K. S. Jones, “SiO₂ thickness determination by x-ray photoelectron spectroscopy, auger electron spectroscopy, secondary ion mass spectrometry, rutherford backscattering, transmission electron microscopy, and ellipsometry,” J. Vac. Sci. Technol. B 18, 440 (2000).

L. S. Robertson, K. S. Jones, L. M. Rubin, and J. Jackson, “Annealing kinetics of {311} defects and dislocation loops in the end-of-range damage region of ion implanted silicon,” J. Appl. Phys. 87, 2910 (2000).

H. Saleh, M. E. Law, S. Bharatan, K. S. Jones, V. Krishnamoorthy, and T. Buyuklimanli, “Energy dependence of transient enhanced diffusion and defect kinetics,” Appl. Phys. Lett. 77, 112 (2000).

M. Griglione, T. J. Anderson, Y. M. Haddara, M. E. Law, K. S. Jones, and A. van den Bogaard, “Diffusion of Ge in Si_1-xGe_x/Si single quantum wells in inert and oxidizing ambients,” J. Appl. Phys. 88, 1366 (2000).