Aldridge, H. L., Lind, A. G., Law, M. E., Hatem, C., & Jones, K. S. “Concentration-dependent diffusion of ion-implanted silicon in In0.53Ga0.47As”Applied Physics Letters, 105(4), 042113–042113. http://doi.org/10.1063/1.4892079

A. G. Lind, M. A. Gill, C. Hatem, K.S. Jones,  “Electrical activation of ion-implanted Si in amorphous and crystalline In0.53Ga0.47As” Nuclear Instruments and Methods in Physics Research B. 337 (2014) 7-10.