Lind, A. G., Aldridge, H. L., Jr., Boomberger, C.C., Hatem, C., Zide, J.M.O. & Jones, K. S. (2015)“Fermi-Level Effects on Extended Defect Evolution in Si+ and P+ Implanted In0.53Ga0.47As” ECS Journal of Solid State Science and Technology, 5(4)P3073-P3077(2016); http://doi.org/10.1149/2.0141604jss

Lind, A. G., Aldridge, H. L., Jr., Jones, K. S., & Hatem, C. (2015)“Co-implantion of Al+, P+, and S+ with Si+ implants into In0.53Ga0.47As” Journal of Vacuum Science & Technology B 33, 051217(2015); http://doi.org/10.1116/1.4931030

Lind, A. G., Aldridge, H. L., Jr., Bomberger, C. C., Hatem, C., Zide, J. M. O., & Jones, K. S. (2015)“Comparison of thermal annealing effects on electrical activation of MBE grown and ion implant Si-doped In0.53Ga0.47As” Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 33(2), 021206–6. http://doi.org/10.1116/1.4914319

Khateeb, Al, S., Lind, A. G., Santos-Ortiz, R., Shepherd, N. D., & Jones, K. S.“Cycling performance and morphological evolution of pulsed laser-deposited FeF2 thin film cathodes for Li-ion batteries”Journal of Materials Science, 1–9. doi: 10.1007/s10853-015-9062-5

Khateeb, S. A., Lind, A. G., Santos-Ortiz, R., Shepherd, N. D., & Jones, K. S. “Effects of Steel Cell Components on Overall Capacity of Pulsed Laser Deposited FeF2 Thin Film Lithium Ion Batteries”Journal of the Electrochemical Society, 162(8), A1667–A1674. doi:10.1149/2.0021509jes

C.S.C. Barrett, A.G. Lind, X. Bao, Z. Ye, K.Y. Ban, P. Martin, E. Sanchez, Y. Xin, K.S. Jones “Quantitative correlation of interfacial contamination and antiphase domain boundary density in GaAs on Si(100)”J. Mater Sci DOI 10.1007/s10853-015-9334-0 (May 2015)

Ya-Hsi Hwang, Shihyun Ahn, Chen Dong, Weidi Zhu, Byung-Jae KIm, Lingcong Le, Fan Ren, Aaron G. Lind, James Dahl, Kevin S. Jones, Stephen J. Pearton, Ivan I. Kravchenko, Ming-Lan Zhang “Degradation Mechanisms of Ti/Al/Ni/Au-based Ohmic contacts on AlGaN/GaN HEMTs”Journal of Vacuum Science & Technology B 33, 031212 (2015); doi 10.1116/1.4919237

Shihyun Ahn, Weidi Zhu, Chen Dong, Lingcong Le, Ya-Hsi Hwang, Byung-Jae Kim, Fan Ren, Stephen J. Pearton, Aaron G. Lind, Kevin S. Jones, I.I. Kravchenko, Ming-Lan Zhang “Study of the effects of GaN buffer layer quality on the dc characteristics of AlGaN/GaN high electron mobility transistors” Journal of Vacuum Science & Technology B 33, 031210 (2015); doi: 10.1116/1.4918715