Peer-Reviewed Publications (2004)

P. J. Simpson, Z. Jenei, P. Asoka-Kumar, R. R. Robison, and M. E. Law, “Observation of fluorine-vacancy complexes in silicon,” Appl. Phys. Lett. 85, 1538 (2004).

R. A. Camillo-Castillo, M. E. Law, and K. S. Jones, “Impact of dopant profiles on the end of range defects for low energy germanium preamorphized silicon,” Mater. Sci. Eng. B 114, 312 (2004).

R. A. Camillo-Castillo, M. E. Law, and K. S. Jones, “Impact of the end of range damage from low energy Ge preamorphizing implants on the thermal stability of shallow boron profiles,” J. Appl. Phys. 96, 4939 (2004).

R. A. Camillo-Castillo, M. E. Law, K. S. Jones, and L. M. Rubin, “Influence of low temperature preanneals on dopant and defect behavior for low energy Ge preamorphized silicon,” J. Vac. Sci. Technol. B 22, 312 (2004).

K. Krishnaswami, S. R. Vangala, B. Zhu, W. D. Goodhue, L. P. Allen, C. Santeufemio, X. Liu, M. C. Ospina, J. Whitten, C. Sung, H. Dauplaise, D. Bliss, G. Dallas, D. Bakken, and K. S. Jones, “Epitaxial growth on gas cluster ion-beam processed GaSb substrates using molecular-beam epitaxy,” J. Vac. Sci. Technol. B 22, 1455 (2004).

A. F. Saavedra, K. S. Jones, M. E. Law, and K. K. Chan, “Kinetics of {311} defect dissolution in silicon-on-insulator (SOI),” Mater. Sci. Eng. B 107, 198 (2004).

A. F. Saavedra, K. S. Jones, M. E. Law, and K. K. Chan, “Comparison of {311} defect evolution in SIMOX and bonded SOI materials,” J. Electrochem. Soc. 151, G266 (2004).

I. Avci, M. E. Law, E. Kuryliw, A. F. Saavedra, and K. S. Jones, “Modeling extended defect ({311} and dislocation loop) nucleation and evolution in silicon,” J. Appl. Phys. 95, 2452 (2004).

A. F. Saavedra, A. C. King, K. S. Jones, and E. C. Jones, “Secondary defect formation in bonded silicon-on-insulator (SOI) after boron implantation,” J. Vac. Sci. Technol. B 22, 459 (2004).

R. T. Crosby , K. S. Jones, M. E. Law, A. N. Larsen, and J. L. Hansen, “{311} defect evolution in ion-implanted, Relaxed Si_1-xGe_x,” J. Vac. Sci. Technol. B 22, 468 (2004).

R. T. Crosby, K. S. Jones, M. E. Law, A. N. Larsen, and J. L. Hansen, “{311} defect evolution in Si-implanted Si_1-xGe_x alloys,” Mater. Sci. Semicond. Process. 6, 205 (2004).

A. F. Saavedra, A. C. King, K. S. Jones, and E. C. Jones, “Electrical activation in silicon-on-insulator (SOI) after low energy boron implantation,” J. Appl. Phys. 96, 1891 (2004).