K. Shazad, K. S. Jones, P. D. Lowen, and R. M. Park, “Exchange electron-hole interaction at the isoelectronic oxygen trap in zinc selenide,” Phys. Rev. B 43, 9247 (1991).

O. Aina, M. Mattingly, J. R. Bates, A. Coggins, J. O’Connor, S. K. Shastry, J. P. Salerno, A. Davis, J. P. Lorenzo, and K. S. Jones, “High-purity InP grown on Si by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 58, 1554 (1991).

A. Deneuville, C. H. Park, P. Ayyub, T. Anderson, P. Lowen, K. S. Jones, and P. H. Holloway, “O⁺ implantation in ZnSe: lattice distortion by raman measurement,” Appl. Surf. Sci. 50, 308 (1991).

K. S. Jones and C. J. Santana, “Amorphization of elemental and compound semiconductors upon ion implantation,” J. Mater. Res. 6, 1048 (1991).

K. S. Jones and D. Venables, “The effect of implant energy, dose and dynamic annealing of end of range damage in Ge⁺ implanted silicon,” J. Appl. Phys. 69, 2931 (1991).

D. Venables and K. S. Jones, “Can recoil distribution models account for end of range damage?,” Nucl. Instrum. Methods Phys. Res. B, 59, 1019 (1991).

A. Katz, K. S. Jones, A. Feingold, S. J. Pearton, and M. Geva, “High quality RTA of InP and GaAs substrates under low pressure tertialbutyl phosphine and tertialbutyl arsine ambient,” J. Vac. Sci. Technol. B 9, 2466 (1991).

J. E. Yu, K. S. Jones, and R. M. Park, “A technique for the preparation of cross-sectional TEM samples of ZnSe/GaAs heterostructures which eliminates process-induced defects,” J. Electron Microsc. Tech. 18, 315 (1991).

E. L. Allen, J. J. Murray, M. D. Deal, J. D. Plummer, K. S. Jones, and W. S. Rubart, “Comparison of the diffusion behavior of ion-implanted Sn, Ge, and Si in GaAs,” J. Electrochem. Soc. 138, 3440 (1991).

A. Katz, A. Feingold, S. Nakahara, S. J. Pearton, M. Geva, E. Lane, and K. S. Jones, “Rapid thermal processing of WSi_x contacts to InP in low-pressure N₂:H₂ and tertiarybutylphosphine ambients,” J. Appl. Phys. 69, 7664 (1991).

W. S. Hobson, F. Ren, M. L. Schnoes, S. K. Sputz, T. D. Harris, S. J. Pearton, C. R. Abernathy, and K. S. Jones, “GaAs/AlGaAs quantum well and modulation-doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane,” Appl. Phys. Lett. 59, 1975 (1991).

A. Katz, A. Feingold, U. K. Chakrabarti, S. J. Pearton, and K. S. Jones, “Highly stable silicon dioxide films deposited by means of rapid thermal low-pressure chemical vapor deposition onto InP,” Appl. Phys. Lett. 59, 2552 (1991).

E. L. Allen, J. J. Murray, M. D. Deal, J. D. Plummer, K. S. Jones, and W. S. Rupert, “A comparison of the diffusion behavior of ion-implanted Sn, Ge, and Si in gallium arsenide,” J. Electrochem. Soc. 138, 3440 (1991).

K. S. Jones, E. L. Allen, H. G. Robinson, D. A. Stevenson, M. D. Deal, and J. D. Plummer, “Extended defects in ion implanted GaAs,” J. Appl. Phys. 70, 6790 (1991).

M. E. Law, E. Solley, M. Liang, and D. Burk, “Self-consistent modeling of minority carrier lifetime and mobility,” IEEE Electron Device Lett. 12, 401 (1991).

H. Park and M. E. Law, “The effects of low-dose silicon implantation damage on diffusion of phosphorus and arsenic in silicon,” Appl. Phys. Lett. 58, 732 (1991).

M. E. Law and J. R. Pfiester, “Low-temperature annealing of arsenic/phosphorus junctions,” IEEE Trans. Electron Devices 38, 278 (1991).

J. R. Pfiester, M. E. Law, and R. W. Dutton, “Improved MOSFET short channel device using germanium implantation,” IEEE Electron Device Lett. 9, 343 (1988).

M.E. Law, “Parameters for point defect diffusion and recombination,” IEEE Trans. Computer-Aided Design 10, 1124 (1991).

M. E. Law, H. Park, and P. Novell, “Theory of dopant diffusion assuming nondilute concentrations of dopant-defect pairs,” Appl. Phys. Lett. 59, 3488 (1991).