C. L. Lee, M. D. Deal, K. S. Jones, H. G. Robinson, and J. C. Bravman, “Effects of ion energy on the diffusion of Si implanted into GaAs,” J. Electrochem. Soc. 141, 2245 (1994).

H. Park, H. G. Robinson, K. S. Jones, and M. E. Law, “Diffusion-limited interaction of dislocation loops and interstitials during dry oxidation in silicon,” Appl. Phys. Lett. 65, 436 (1994).

M. Liang and M. E. Law, “Influence of lattice self-heating and hot-carrier transport on device performance,” IEEE Trans. Electron Devices 41, 2391 (1994).

S. Chaudhry and M. E. Law, “Effects of low-Dose silicon, carbon, and oxygen implantation damage on the diffusion of phosphorus in silicon,” J. Electrochem. Soc. 141, 3516 (1994).

M. Liang and M. E. Law, “An object oriented approach to device simulation,” IEEE Trans. Computer-Aided Design 13, 1235 (1994).

C. Frank and M. E. Law, “Two-dimensional study on the effects of nonamorphizing silicon implantation damage on phosphorus diffusion,” Appl. Phys. Lett. 64, 1254 (1994).

M. D. Giles, D. S. Boning, G. R. Chin, W. C. Dietrich, M. S. Karasick, M. E. Law, P. K. Mozumder, L. R. Nackman, V. T. Rajan, D. M. H. Walker, R. H. Wang, and A. S. Wong, “Semiconductor wafer representation for TCAD,” IEEE Trans. Computer-Aided Design 13, 82 (1994).

H. Park, K. S. Jones, and M.E. Law, “A point defect based two-dimensional model of the evolution of dislocation loops in silicon during oxidation,” J. Electrochem. Soc. 141, 759 (1994).

J. E. Yu, K. S. Jones, P. H. Holloway, B. Pathangey, E. Bretschneider, T. J. Anderson, S. S. Sun, and C. N. King, “Temperature and flow modulation doping of manganese in ZnS electroluminescent films by low pressure metalorganic chemical vapor deposition,” J. Electron. Mater. 23, 299 (1994).

S. Bharatan, K. S. Jones, C. R. Abernathy, S. J. Pearton, F. Ren, P. Wisk, and J. Lothian, “Structural characterization of GaN and GaAs_xN_1-x grown by ECR-MOMBE,” J. Vac. Sci. Technol. A 12, 1094 (1994).

H. G. Robinson, T. E. Haynes, E. L. Allen, C. C. Lee, M. D. Deal, and K. S. Jones, “Effect of implant temperature on dopant diffusion and defect morphology for Si implanted GaAs,” J. Appl. Phys. 76, 4571 (1994).