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Student
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Employer
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Dissertations
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Jesse Johnson
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Mainstream Engineering Inc. |
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Barbara Kazanowska
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Applied Materials |
Chemical Wet Etching of Al(X)Ga(1-X)N Nanostructures
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Emily Turner
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Investigation of Si Quantum Dot Formation via High-Temperature Oxidation of Si/SiGe Nanostructures
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Gibson Scisco
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University of Maryland |
Templated Carbon Nanotube Electrodes for On-Chip Electrochemical Double Layers Capacitors
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Katherine Haynes
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Lam Research
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Defect Evolution During Elevated-Temperature Helium Implantation Into Silicon
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David Brown
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Air Force Research Lab
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Phase Properties of Semiconductor and Transition Metal Materials from Experimental and Computational Principles
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Zach Weinrich
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Intel
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Dopant-Defect Interactions In Epitaxially Grown Highly Doped Si:P
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Will Brewer
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Micron
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Investigation Of Si/SiGe FinFETS And Vertically Stacked Nanowires Via Atom Probe Tomography
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Caleb Barrett
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Intel
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Investigation of Antiphase Domain Boundary Energetics in GaAs-ON-Si(001)
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Ethan Kennon
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Keysight Tech.
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Behavior of Highly Te doped InGaAs
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Ryan Murray
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IMEC San Francisco
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The Effect of Ion Implantation on the Structural and Electronic Properties of Molybdenum Disulfide
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Tom Martin
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University of Wyoming
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Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials
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Henry Aldridge
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Global Foundries
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Continuum Modelling of Silicon Diffusion In Indium Gallium Arsenide
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Aaron Lind
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Intel
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“Dopant-Defect Interactions in Si Doped InGaAs”
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Nick Vito
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FEI
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“Studies on the Role of the Substrate Interface for Germanium and Silicon Lithium Ion Battery Anodes”
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Brad Yates
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Intel
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“Implantation and activation of ultra-shallow boron in germanium”
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Blake Darby
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Intel
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“Amorphization and solid phase epitaxial growth of germanium”
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Sidan Jin
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Intel
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“Boron activation and diffusion in polycrystalline silicon with flash-assist rapid thermal annealing”
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Daniel Gostovic
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HP
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“A multi-length scale approach to correlating solid oxide fuel cell porous cathode microstructure to electrochemical performance”
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Nicholas G. Rudawski
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Univ. of Florida
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“Stressed solid-phase epitaxial growth of silicon”
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J. Samuel Moore
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Intel
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“Influence of germanium concentration and homogeneous boron doping on microstructure, kinetics, and sheet resistance of nickelgermanosilicide thin films”
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Michelle Phen
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Intel
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“Strain relaxation and solid phase epitaxial regrowth in ion implanted strained silicon and strained silicon germanium”
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Aijie Chen
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Case Western University
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“Effect of cathode microstructure on cathode polarization in sintered strontium-doped lanthanum manganite/yttria stabilized zirconia solid oxide fuel cells”
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Diane Hickey
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Advanced Diamond Technologies
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“Ion implantation induced defect formation and amorphization in the group IV semiconductors: diamond, silicon and germanium”
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Renata Camillo-Castillo
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IBM
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“Boron activation and diffusion in silicon for varying initial process conditions during flash-assist rapid thermal annealing”
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Jeanette Jacques
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DRS Technologies
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“Boron diffusion within amorphous silicon materials”
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Robert Crosby
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Intel
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“Evolution of self-interstitials induced by ion-implantation in SiGe alloys”
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Antonio Saavedra
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Intel
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“Interfacial phenomena in ion implanted silicon-on-insulator materials”
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Robert R. Robison
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Intel
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“Simulation of fluorine diffusion behavior and boron-fluorineco-interaction in silicon”
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Kevin Gable
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DRS Technologies
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“Boron activation and diffusion during millisecond annealing of ion-implanted silicon”
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Mark Clark
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Twincreeks
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“Laser thermal processing of novel doping schemes in silicon”
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Erik Kuryliw
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Intel
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“Analyzing the thermal annealing behavior of laser thermal processed silicon”
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Chad Lindfors
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Intel
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“Low temperature solid phase epitaxial regrowth of ion implanted boron in silicon”
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Aaron Lilak
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Intel
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“Analysis and modeling of transient phenomena in boron-doped silicon”
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Lance Robertson
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DRS Technologies
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“Diffusion of ion implanted boron in silicon: the effects of lattice defects and co-implanted impurities”
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Richard Brindos
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Intel
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“Determination and modeling of the interaction between arsenic and silicon interstitials in silicon”
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Patrick Keys
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Intel
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“Phosphorus-defect interactions during thermal annealing of ion implanted silicon”
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Gopalakrishnan Subramanian
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“Atomistic simulation studies of defect formation, migration and stability in ion-implanted silicon”
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Qing Zhai
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Varian Semiconductor
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“Effects of co-dopants on the microstructure and electroluminescence of ZnS:Mn thin film phosphors”
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Sushil Bharatan
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Analog Devices
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“Extraction of point defect parameters by quantitative transmission electron microscopy”
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Sharon Cobb
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NASA
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“Microstructural development during the directional solidification of mercury zinc selenide alloys”
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Ranju Datta
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“The effect of implantation conditions on microstructural evolution in oxygen implanted silicon”
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Ananth Naman
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Cabot Corporation
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“Characterization of the phosphor layer microstructure and its effects on the electroluminescent properties of thin-film electroluminescent devices”
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Scott B. Herner
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Twincreeks
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“Point defects in silicon with a titanium disilicide film and vacancy/extrinsic dislocation loop interaction”
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Jinning Liu
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IBM
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“Defect and diffusion study in boron implanted silicon”
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Jong Ryul Kim
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“Study of electrical degradation of II-VI ZnSe-based single quantum-well light-emitting devices”
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Christopher J. Santana
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RF Microdevices
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“Nucleation and growth of AlGaP on silicon by metal-organic molecular beam epitaxy”
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Jengyi Yu
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Novellus Systems
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“Low-pressure metalorganic chemical vapor deposition of thin zinc sulfide phosphor layers with modulation doping for thin film electroluminescent devices”
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David Venables
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“Defect formation and evolution in high dose oxygen implanted silicon”
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