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Former PhD Students and Dissertations

Student
Employer
Dissertations
Lydia Kuebler Applied Materials TEM Investigation of Al+-Implanted 4H-SIC Substrates after high temperature annealing
Chappel Sharrock Intel Novel Diffusion Mechanisms during the Oxidation of Silicon Germanium/Silicon Heterostructures
Jesse Johnson Mainstream Engineering Inc. Pulsed Laser Melting of Epitaxial SiGe and Synthesis of Titanium-Germanosilicide Contact Liners
Barbara Kazanowska Applied Materials Chemical Wet Etching of Al(X)Ga(1-X)N Nanostructures
Emily Turner Investigation of Si Quantum Dot Formation via High-Temperature Oxidation of Si/SiGe Nanostructures
Gibson Scisco University of Maryland Templated Carbon Nanotube Electrodes for On-Chip Electrochemical Double Layers Capacitors
Katherine Haynes Lam Research Defect Evolution During Elevated-Temperature Helium Implantation Into Silicon
David Brown Air Force Research Lab Phase Properties of Semiconductor and Transition Metal Materials from Experimental and Computational Principles
Zach Weinrich Intel Dopant-Defect Interactions In Epitaxially Grown Highly Doped Si:P
Will Brewer Micron Investigation Of Si/SiGe FinFETS And Vertically Stacked Nanowires Via Atom Probe Tomography
Caleb Barrett Intel Investigation of Antiphase Domain Boundary Energetics in GaAs-ON-Si(001)
Ethan Kennon Keysight Tech. Behavior of Highly Te doped InGaAs
Ryan Murray IMEC San Francisco The Effect of Ion Implantation on the Structural and Electronic Properties of Molybdenum Disulfide
Tom Martin University of Wyoming Effects of Ultra-Thin Germanium Layers at the Silicon-Oxide Interface During Oxidation Reactions on Injection of Interstitials
Henry Aldridge Global Foundries Continuum Modelling of Silicon Diffusion In Indium Gallium Arsenide
Aaron Lind Intel “Dopant-Defect Interactions in Si Doped InGaAs”
Nick Vito FEI “Studies on the Role of the Substrate Interface for Germanium and Silicon Lithium Ion Battery Anodes”
Brad Yates Intel “Implantation and activation of ultra-shallow boron in germanium”
Blake Darby Intel “Amorphization and solid phase epitaxial growth of germanium”
Sidan Jin Intel “Boron activation and diffusion in polycrystalline silicon with flash-assist rapid thermal annealing”
Daniel Gostovic HP “A multi-length scale approach to correlating solid oxide fuel cell porous cathode microstructure to electrochemical performance”
Nicholas G. Rudawski Univ. of Florida “Stressed solid-phase epitaxial growth of silicon”
J. Samuel Moore Intel “Influence of germanium concentration and homogeneous boron doping on microstructure, kinetics, and sheet resistance of nickelgermanosilicide thin films”
Michelle Phen Intel “Strain relaxation and solid phase epitaxial regrowth in ion implanted strained silicon and strained silicon germanium”
Aijie Chen Case Western University “Effect of cathode microstructure on cathode polarization in sintered strontium-doped lanthanum manganite/yttria stabilized zirconia solid oxide fuel cells”
Diane Hickey Advanced Diamond Technologies “Ion implantation induced defect formation and amorphization in the group IV semiconductors: diamond, silicon and germanium”
Renata Camillo-Castillo IBM “Boron activation and diffusion in silicon for varying initial process conditions during flash-assist rapid thermal annealing”
Jeanette Jacques DRS Technologies “Boron diffusion within amorphous silicon materials”
Robert Crosby Intel “Evolution of self-interstitials induced by ion-implantation in SiGe alloys”
Antonio Saavedra Intel “Interfacial phenomena in ion implanted silicon-on-insulator materials”
Robert R. Robison Intel “Simulation of fluorine diffusion behavior and boron-fluorineco-interaction in silicon”
Kevin Gable DRS Technologies “Boron activation and diffusion during millisecond annealing of ion-implanted silicon”
Mark Clark Twincreeks “Laser thermal processing of novel doping schemes in silicon”
Erik Kuryliw Intel “Analyzing the thermal annealing behavior of laser thermal processed silicon”
Chad Lindfors Intel “Low temperature solid phase epitaxial regrowth of ion implanted boron in silicon”
Aaron Lilak Intel “Analysis and modeling of transient phenomena in boron-doped silicon”
Lance Robertson DRS Technologies “Diffusion of ion implanted boron in silicon: the effects of lattice defects and co-implanted impurities”
Richard Brindos Intel “Determination and modeling of the interaction between arsenic and silicon interstitials in silicon”
Patrick Keys Intel “Phosphorus-defect interactions during thermal annealing of ion implanted silicon”
Gopalakrishnan Subramanian “Atomistic simulation studies of defect formation, migration and stability in ion-implanted silicon”
Qing Zhai Varian Semiconductor “Effects of co-dopants on the microstructure and electroluminescence of ZnS:Mn thin film phosphors”
Sushil Bharatan Analog Devices “Extraction of point defect parameters by quantitative transmission electron microscopy”
Sharon Cobb NASA “Microstructural development during the directional solidification of mercury zinc selenide alloys”
Ranju Datta “The effect of implantation conditions on microstructural evolution in oxygen implanted silicon”
Ananth Naman Cabot Corporation “Characterization of the phosphor layer microstructure and its effects on the electroluminescent properties of thin-film electroluminescent devices”
Scott B. Herner Twincreeks “Point defects in silicon with a titanium disilicide film and vacancy/extrinsic dislocation loop interaction”
Jinning Liu IBM “Defect and diffusion study in boron implanted silicon”
Jong Ryul Kim “Study of electrical degradation of II-VI ZnSe-based single quantum-well light-emitting devices”
Christopher J. Santana RF Microdevices “Nucleation and growth of AlGaP on silicon by metal-organic molecular beam epitaxy”
Jengyi Yu Novellus Systems “Low-pressure metalorganic chemical vapor deposition of thin zinc sulfide phosphor layers with modulation doping for thin film electroluminescent devices”
David Venables “Defect formation and evolution in high dose oxygen implanted silicon”