C.-C. Lin and M. E. Law, “2-D mesh adaption and flux discretization for dopant diffusion modeling,” IEEE Trans. Computer-Aided Design 15, 194 (1996).

M. E. Law, Technology computer aided design characterization needs and requirements,” J. Vac. Sci. Technol. B 14, 213 (1996).

J. W. Lee, C. J. Santana, C. R. Abernathy, S. J. Pearton, and K. S. Jones, “Plasma-induced damage and hydrogenation of Al_xGa_1-xP,” Solid State Electron. 39, 1 (1996).

K. S. Jones, L. H. Zhang, V. Krishnamoorthy, M. E. Law, D. S. Simons, P. A. Chi, L. Rubin, and R. G.Elliman, “Diffusion of ion implanted boron in preamorphized silicon,” Appl. Phys. Lett. 68, 2672 (1996).

K. S. Jones, R. G. Elliman, M. Petravic, and P. Kringhoj, “Using doping superlattices to study transient enhanced diffusion of boron in regrown silicon,” Appl. Phys. Lett. 68, 3111 (1996).

S. B. Herner, V. Krishnamoorthy, and K. S. Jones, “Point defect-dislocation loop behavior in Si with a TiSi₂ film,” Appl. Surf. Sci. 103, 377 (1996).

C. R. Abernathy, S. J. Pearton, J. D. MacKenzie, J. R. Mileham, S. R. Bharatan, V. Krishnamoorthy, K. S. Jones, M. Hagerott-Crawford, R. J. Shul, S. P. Kilcoyne, J. M. Zavada, D. Zhang, and R. M. Kolbas, “Growth and fabrication of GaN-InGaN microdisk laser structures,” Solid State Electron. 39, 311 (1996).

J. R. Kim and K. S. Jones, “Degradation of II-VI ZnSe-based single quantum well light-emitting devices,” Crit. Rev. Solid State Mater. Sci. 21, 1 (1996).

S. B. Herner, B. P. Gila, K. S. Jones, H-J. Gossmann, J. M. Poate, and H. S. Luftman, “Surface roughness-induced artifacts in SIMS depth profiling and a simple Technique to replanarize the surface,” J. Vac. Sci. Technol. B 14, 3593 (1996).

S. J. Pearton, S. Bendi, K. S. Jones, V. Krishnamoorthy, R. G. Wilson, F. Ren, R. F. Karlicek, and R. A. Stall, “Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures,” Appl. Phys. Lett. 69, 1879 (1996).

M. Antonell, K. S. Jones, and T.E. Haynes, “Carbon incorporation for strain compensation during solid phase epitaxial regrowth of SiGe at 500-600 ^oC,” J. Appl. Phys. 79, 7646 (1996).

C. J. Santana, C. R. Abernathy, S. J. Pearton, and K. S. Jones, “Initial growth stages of Al_xGa_1-xP on epitaxial silicon,” J. Cryst. Growth 164, 248 (1996).

S. B. Herner, K. S. Jones, H.-J. Gossmann, R. T. Tung, H. S. Luftman, and J. M. Poate, “The influence of TiSi₂ and CoSi₂ growth on Si native point defects: the role of the diffusing species,” Appl. Phys. Lett. 68, 2870 (1996).

S. B. Herner, K. S. Jones, H.-J. Gossmann, J. M. Poate, and H. S. Luftman, “Point defects in Si after formation of a TiSi₂ film: evidence for vacancy supersaturation and interstitial depletion,” Appl. Phys. Lett. 68, 1687 (1996).

J. Liu, V. Krishnamoorthy, H.-J. Gossmann, L. Rubin, M. E. Law, and K.S. Jones, “The effect of boron implant energy on transient enhanced diffusion in silicon,” J. Appl. Phys. 81, 1656 (1996).