M.E. Law, “Parameters For Point Defect Diffusion and Recombination,” Numerical Modeling of Processes and Devices for Integrated Circuits, 1990. NUPAD III. 1990 Workshop on, p. 9-10, June 1990.

W.S. Rubart, K.S. Jones, L. Seiberling and D.K. Sadana, “Low Energy Implantation of Si and Sn into GaAs,” Mat. Res. Soc. Symp. Proc., 157, 677-682, 1990.

K.S. Jones, “Amorphization of Elemental and Compound Semiconductors,” in “Ion Implantation of Semiconductors,” eds., K.S. Jones and S.J. Pearton, (ECS Press, Pennington, NJ), 90-13, 230-256, 1990.

D. Venables and K.S. Jones, “Dislocation Deflection and Reduction in Ge Implanted SIMOX Wafers,” in “Ion Implantation of Semiconductors,” eds., K.S. Jones and S.J. Pearton, (ECS Press, Pennington, NJ), 90-13, 257-260, 1990.

S.J. Pearton, U.K. Chakraberti, W.S. Hobson, F.A. Baiocchi and K.S. Jones, “Ion Beam Induced Damage in RIE GaAs, AlGaAs, and InP,” Proceedings of the Electrochemical Society Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors 90-13, 130-142, 1990.

S.J. Pearton, W.S. Hobson and K.S. Jones, “Elevated Temperature RIE of GaAs and AlGaAs in C2H6/H2,” Mat. Res. Soc. Symp. Proc., 158, 425-430, 1990.

Y.H. Wang, H.S. Chen, S.S. Li, K.S. Jones, P. Lowen, and D. Kisker, “Defect and Electrical Characterization of OMVPE Grown ZnSe on GaAs Implanted with High Doses of Lithium and Nitrogen,” Proceedings of Symposium on Ion Implantation and Dielectrics for Elemental and Compound Semiconductors, 1990.