L. S. Adam, M. E. Law, S. Szpala, P. J. Simpson, D. Lawther, O. Dokumaci, and S. Hegde, “Experimental identification of nitrogen-vacancy complexes in nitrogen implanted silicon,” Appl. Phys. Lett. 79, 623 (2001).

M. Griglione, T. J. Anderson, M. E. Law, K. S. Jones, A. van den Bogaard, and M. Puga-Lambers, “Diffusion of single quantum well Si_1-xGe_x/Si layers under vacancy supersaturation,” J. Appl. Phys. 89, 2904 (2001).

K. S. Jones, C. Jasper, and A. Hoover, “Effect of annealing time and temperature on the formation of threading and projected range dislocations in 1 MeV boron implanted Si,” Appl. Phys. Lett. 78, 1664 (2001).

C. Jasper, S. K. Banerjee, A. Hoover, and K. S. Jones, “Threading dislocation evolution in mega-electron-volt phosphorus implanted silicon,” J. Appl. Phys. 89, 4326 (2001).

H. Banisaukas, K. S. Jones, S. Talwar, D. F. Downey, and S. Falk, “Varying implant dose rate for defect reduction in laser thermal processing” Mater. Sci. Semicond. Process. 4, 339 (2001).

D. B. Fenner, J. I. Hautala, L. P. Allen, T. G. Tetreault, A. Al-Jibouri, J. I. Budnick, and K. S. Jones, “Surface processing with gas-cluster ions to improve giant magnetoresistance films,” J. Vac. Sci. Technol. A 19, 1207 (2001).