P. Novell & M.E. Law, “The Effect of Nondilute Dopant-Defect Pair Concentrations on Arsenic Diffusion,” Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 41-44, June 1992.

M.D. Giles, G.R. Chin, M.E. Law & L.R. Nackman, “Representing and Manipulating Fields for TCAD,” Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 207-212, June 1992.

Chih-Chuan Lin, M.E. Law & R.E. Lowther, “Automatic Grid Refinement and Higher Order Flux Discretizations for Diffusion Modeling,” Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 191-196, June 1992.

D. Bonning, G. Chin, R. Cottle, W. Dietrich, S. Duvall, M. Giles, R. Harris, M. Karasick, N. Khalil, M. Law, M.J. McLennan, P.K. Mozumder, L. Nackman, S. Nassif, V.T. Rajan, D. Schroeder, R. Tremain, D.M.H. Walker, R. Wang & A. Wong, “Developing and Integrating TCAD Applications with the Semiconductor Wafer Representation,” Numerical Modeling of Processes and Devices for Integrated Circuits, 1992. Workshop on p. 199-204, June 1992.

D. Venables, K.S. Jones, F. Namavar and J.M. Manke, “Strain Relief and Defect Formation in High-Dose Oxygen Implanted Silicon,” Mat. Res. Soc. Symp. Proc., 235, 103-108, 1992.

H.L. Meng, K.S. Jones and S. Prussin, “Oxidation-Induced Point Defects in Silicon,” Mat. Res. Soc. Symp. Proc., 238, 1992.

K.S. Jones, “Ion Implantation Related Defects in GaAs,” Mat. Res. Soc. Symp. Proc., 240, 785-796, 1992.

A. Feingold, A. Katz, S.J. Pearton, U.K. Chakrabarti and K.S. Jones, “Rapid Growth Kinetics, Mechanical Properties and Thermal Stability of SiOx Thin Films Grown by Rapid Thermal Low Pressure Chemical Vapor Deposition,” Mat. Res. Soc. Symp. Proc., 240, 425-430, 1992.

J.E. Yu, K.S. Jones, J. Fang, P.H. Holloway, B. Pathangey, E. Bretschneider and T.J. Anderson, “Characterization of ZnS Layers Grown by MOCVD for Thin Film Electroluminescence (TFEL) Devices,” Mat. Res. Soc. Symp. Proc., 242, 215-220, 1992.

H.G. Robinson, D.A. Stevenson, M.D. Deal and K.S. Jones, “Correlation of Dislocation Loop Formation and Time-Dependent Diffusion of Implanted p-Type Dopants in Gallium Arsenide,” Mat. Res. Soc. Symp. Proc., 240, 715-720, 1992.

C. Lee and K.S. Jones, “Solid-Phase Epitaxial Regrowth of Implantation Amorphized Si0.7Ge0.3 Grown on <100> Silicon,” Mat. Res. Soc. Symp. Proc., 235, 57-63, 1992.

H.L. Meng and K.S. Jones, “Dislocation Loops as Quantitative Point Defects Detectors in Si,” Mat. Res. Soc. Symp. Proc., 1992.

J.E. Yu, J. Fan, E. Bretschneider, B. Pathangey, K.S. Jones, T.J. Anderson and P.H. Holloway, “A Study of Nucleation of ZnS Thin Layers Grown by Low-Pressure OMCVD for Thin Film Electroluminescence (TFEL) Devices,” Mat. Res. Soc. Symp. Proc., 263, 1992.

H.L. Meng, S. Prussin and K.S. Jones, “Point Defect Detector Studies of Ge+ Implanted Silicon Upon Oxidation,” Mat. Res. Soc. Symp. Proc., 262, 253-257, 1992.

H.L. Meng, K.S. Jones and S. Prussin, “Point Defect Detector Studies of Oxidized Silicon,” Mat. Res. Soc. Symp. Proc., 238, 101-106, 1992.