L. S. Adam, M. E. Law, O. Dokumaci, and S. Hegde, “Physical integrated diffusion-oxidation model for implanted nitrogen in silicon,” J. Appl. Phys. 91, 1894 (2002).

M. E. Law, “Process modeling for future technologies,” IBM J. Res. Dev. 46, 339 (2002).

S. K. Earles, M. E. Law, R. Brindos, K. S. Jones, S. Talwar, and S. Corcoran, “Nonmelt laser annealing of 5-keV and 1-keV boron-implanted silicon,” IEEE Trans. Electron Devices 49, 1118 (2002).

L. Radic, A. D. Lilak, and M. E. Law, “Dependence of boron cluster dissolution on the annealing ambient,” Appl. Phys. Lett. 81, 826 (2002).

A. D. Lilak, M. E. Law, L. Radic, K. S. Jones, and M. H. Clark, “Kinetics of boron reactivation in doped silicon from hall effect and spreading resistance techniques,” Appl. Phys. Lett. 81, 2244 (2002).

M. H. Clark, K. S. Jones, and F. A.Stevie, Secondary ion mass spectrometry induced damage adjacent to analysis craters in silicon,” J. Vac. Sci. Technol. A 20, 1663 (2002).

L. P. Allen, Z. Insepov, D. B. Fenner, C. Santeufemio, W. Brooks, K. S. Jones, and I. Yamada, “Craters on silicon surfaces created by gas cluster ion impacts,” J. Appl. Phys. 92, 3671 (2002).

F. C. Hou, G. Bosman, and M. E. Law, “Maximum allowable bulk defect density for generation-recombination noise-free device operation,” IEEE Trans. Electron Devices 49, 2080 (2002).

A. F. Saavedra, J. Frazier, K. S. Jones, I. Avci, S. K. Earles, M. E. Law, and E. C. Jones, “Influence of the surface Si/buried oxide on extended defect evolution in silicon-on-insulator scaled to 300 angstroms,” J. Vac. Sci. Technol. B 20, 2243 (2002).