W. S. Hobson, M. C. Wu, Y. K. Chen, M. A. Chin, M. Geva, and K.S. Jones, “Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy,” Appl. Phys. Lett. 60, 598 (1992).

S. J. Pearton, U. K. Chakrabarti, E. Lane, A. P. Perley, C. R. Abernathy, W. S. Hobson, and K. S. Jones, “Characteristics of III-V dry etching in HBr-based discharges,” J. Electrochem. Soc. 139, 856 (1992).

A. Katz, A. Feingold, S. Nakahara, E. Lane, M. Geva, S. J. Pearton, F. Stevie, and K. S. Jones, “Influence of ammonia on RTCVD of TiN filing from tetrakis Ti precursor onto InP,” J. Appl. Phys. 71, 993 (1992).

D. Venables, K. S. Jones, and F. Namavar, “Low-dislocation-density silicon-on-insulator material produced by sequential oxygen implantation and low-temperature annealing,” Appl. Phys. Lett. 60, 3147 (1992).

H. Park and M. E. Law, “Point defect based modeling of low dose silicon implant damage and oxidation effects on phosphorus and boron diffusion in silicon,” J. Appl. Phys. 72, 3431 (1992).

M. Liang and M. E. Law, “The effect of selectively ion-implanted collectors on bipolar electrical characteristics,” Solid State Electron. 35, 1017 (1992).

D. R. Apte and M. E. Law, “Comparison of iterative methods for AC analysis in PISCES-IIB,” IEEE Trans. Computer-Aided Design 11, 671 (1992).