N. G. Rudawski, K. S. Jones, and R. Gwilliam, “Solid phase epitaxy in uniaxially stressed (001) Si,” Appl. Phys. Lett. 91, 172103 (2007).

D. Gostovic, J. R. Smith, D. P. Kundinger, K. S. Jones, and E. D. Wachsman, “Three-dimensional reconstruction of porous LSCF cathodes,” Electrochem. Solid-State Lett. 10, B214 (2007).

K. Thompson, J. H. Bunton, J. S. Moore, and K. S. Jones, “Compositional analysis of Si nanostructures: SIMS-3D tomographic atom probe comparison,” Semicond. Sci. Technol. 22, S127 (2007).

J. R. Smith, A. Chen, D. Gostovic, D. Hickey, D. Kundinger, K. L. Duncan, R. T. DeHoff, K. S. Jones and E. D. Wachsman, “Evaluation of the relationship between cathode microstructure and electrochemical behavior for SOFCs,” Solid State Ionics 180, 90 (2007).

N. Burbure, N. G. Rudawski, and K. S. Jones, “Effect of oxide on trench edge defect formation in ion-implanted silicon,” Electrochem. Solid-State Lett. 10, H184 (2007).

R. T. Crosby, K. S. Jones, M. E. Law, L. Radic, P. .E. Thompson, and J. Liu, “Interaction of ion-implantation-induced interstitials in B-doped SiGe,” Mater. Sci. Semicond. Process. 10, 1 (2007).

D. P. Hickey, Z. L. Hickey, K. S. Jones, R. G. Elliman, and E. E. Haller, “Regrowth-related defect formation and evolution in 1 MeV amorphized (001) Ge,” Appl. Phys. Lett. 90, 132114 (2007).