B. E. Jones, K. S. Jones, K. J. Rambo, V. A. Rakov, J. Jerald, and M. A. Uman, “Oxide reduction during triggered-lightning fulgurite formation,” J. Atmos. Sol. Terr. Phys. 67, 423 (2005).

R. T. Crosby, K. S. Jones, M. E. Law, L. Radic, P.E. Thompson, and J. Liu, “Dislocation loops in silicon-germanium alloys: the source of interstitials,” Appl. Phys. Lett. 87, 192111 (2005).

M. H. Clark and K.S. Jones, “Strain compensation in boron-indium coimplanted laser thermal processed silicon,” J. Appl. Phys. 97, 093525 (2005).

J. M. Jacques, K. S. Jones, L. S. Robertson, A. Li-Fatou, C. M. Hazelton, E. Napolitani, and L.M. Rubin, “Fluorine-enhanced boron diffusion in germanium-preamorphized silicon,” J. Appl. Phys. 98, 073521 (2005).

K. A. Gable, L. S. Robertson, A. Jain, and K. S. Jones, “The effect of preamorphization energy on ultrashallow junction formation following ultrahigh-temperature annealing of ion-implanted silicon,” J. Appl. Phys. 97, 044501 (2005).

A.-EL. Kouche, J. Lin, M. E. Law, S. Kim, B. S. Kim, F. Ren, and S. Pearton, “Remote sensing system for hydrogen using GaN schottky diodes,” Sens. Actuators B 105, 329 (2005).