R. Datta, L.P. Allen, R. Chandonnet, M. Farley & K.S. Jones, “Effect of varying implant energy and dose on the SIMOX microstructure,” SOI Conference, 1997 Proceedings., 1997 IEEE International, p. 42-43, October 1997.

A.D. Lilak, S.K. Earles, K.S. Jones, M.E. Law, & M.D. Giles, “A physics-based modeling approach for the simulation of anomalous boron diffusion and clustering behaviors,” Electron Device Meeting, 1997. Technical Digest. International, p. 493-496, December 1997.

M.E. Law & M. Cerrato, “Improved local refinement algorithms for adaptive meshing of process simulation problems,” Simulation of Semiconductor Processes and Devices, 1997. SISPAD ’97, 1997 International Conference on, p. 233-235, September 1997.

H.A. Rueda, S. Cea, & M.E. Law, “Mechanical stress modeling for silicon fabrication processes,” Simulation of Semiconductor Processes and Devices, 1997. SISPAD ’97, 1997 International Conference on, p. 53-55, September 1997.

S. Brad Herner, Hans J. Gossman, Kevin S. Jones, and H. S. Luftman, “Investigation of Vacancy Generation in Silicon with a TiSi2 Film,” MRS Proceedings, 469, 151, 1997.

V. Krishnamoorthy, Kevin S. Jones, and David Venables, J. Jackson “Effect of End-of-Range Defects, Arsenic Clustering and Precipitation on Transient Enhanced Diffusion in As+ Implanted Si,” Mat. Res. Symp. Proc. 469, 401, 1997.

K.S. Jones, K. Moller, J. Chen, M. Puga-Lambers, M. Law, D.S. Simons, P. Chi, B. Freer, J. Bernstein, L. Rubin, R. Simonton, R.G. Elliman, M. Petravic, and P. Kringhoj, “The Effect of End of Range Loops on Transient Enhanced Diffusion in Si,” IEEE Ion Implantation Technology Proceedings 96, 618-621, 1997.

J. Liu, V. Krishnamoorthy, K.S. Jones, M.E. Law, J. Shi, and J. Bennett, “Transient Enhanced Diffusion and Defect Studies in B Implanted Si,” IEEE Ion Implantation Technology Proceedings 96, 626-629, 1997.

V. Krishnamoorthy, B. Beaudet, K.S. Jones and D. Venables, “Energy Dependence of Transient Enhanced Diffusion in Low Energy High Dose Arsenic Implants in Silicon,” IEEE Ion Implantation Technology Proceedings, 96, 638-641, 1997.

A.D. Lilak, M.E. Law, K.S. Jones, M.D. Giles, “Modeling of transient enhanced diffusion of Boron Diffusion and Clustering Behaviors,” International Electron Device Meeting, 493-496, 1997.

M.E. Law, K.S. Jones, S.K. Earles, A.D. Lilak, J.W. Xu, “Modeling of Extended Defects in Silicon,” Microstructure Evolution During Irradiation, Eds. I.M. Robertson, G.S. Was, L.W. Hobbs, T. Diaz de la Rubia, Materials Research Society, 439, 3-10, 1997.

M.E. Law, K.S. Jones, S.K. Earles, A.D. Lilak, J.W. Xu, “Modeling of Extended Defects in Silicon,” Materials Modeling and Synthesis by Ion Beam Processing Fall 1996 Proceedings, Eds. D.E. Alexander, N.W. Cheung, B. Park, W. Skorupa, Materials Research Society, 438, 45-52, 1997.

H.O. Dokumaci, H.-J. Gossman, K.S. Jones, M.E. Law, “An Investigation of Vacancy Population During Arsenic Activation in Silicon,” Defects in Electronic Materials Fall 1996 Proceedings, Materials Research Society, 442, 151-156, 1997.

J. Desrouches, V. Krishnamoorthy, K.S. Jones and C. Jasper “Effect of Implant Energy on Silicon defect Evolution,” Mat. Res. Soc. Symp.Proc., 469, 283-289, 1997.

D. Venables, V. Krishnamoorthy, H.-J. Gossman, A. Lilak, K.S. Jones and D.C. Jacobson, “The Role of Vacancies and Interstitials in Transient Enhanced Diffusion of Arsenic Implanted Into Silicon,” Mat. Res. Soc. Symp. Proc., 469, 315-321, 1997.