T.E. Haynes, C. Lee, and K.S. Jones, “Time-Resolved Reflectivity Study of Solid Phase Epitaxial Regrowth in Relaxed and Strained Si1-xGex Epilayers,” Mat. Res. Soc. Symp. Proc., 281, 479-484, 1993.

P.W. Wisk, C.R. Abernathy, S.J. Pearton, A. Katz, F. Ren, J.R. Lothian and K.S. Jones, “Growth of GaN, AlN and InN by Metalorganic Molecular Beam Epitaxy Using ECR Generated Nitrogen Plasmas,” Mat. Res. Soc. Symp. Proc., 282, 599-604, 1993.

K.S. Jones, H.L. Meng, B. Zhu, H.G. Robinson, M.E. Law and S. Prussin, “Using Implantation Induced Dislocation Loops as Detectors of Interstitial Injection During Oxidation of Silicon,” Proceedings of the International Conference on Beam Processing of Advanced Materials, TMS/ASM International, Materials Park, OH, 73, 697-704, 1993.

J.E. Yu, K.C. Chou, B. Pathangey, K.S. Jones and T.J. Anderson, “Characteristics of In0.5Ga0.5P/GaAs Grown at High Temperature Using Low-Pressure MOVPE,” Mat. Res. Soc. Symp. Proc., 312, 1993.

H.L. Meng, J. Chen, H.G. Robinson, M.E. Law, J.A. Slinkman and K.S. Jones, “Using Oxidation to Study the Reaction Between Point Defects and Dislocation Loops,” Proceedings of the Electrochem. Soc., 93-6, 236-42, 1993.

H. Park, K.S. Jones, Slinkman, J.A. and Law, M.E., “The Effects of Strain on Dopant Diffusion in Silicon,” Technical Digest of the International Electron Devices Meeting, 303-306, December 1993.

K.S. Jones, H.G. Robinson, T.E. Haynes, M.D. Deal, C.C. Lee and E.L. Allen, “Defects and Diffusion in Si+ Implanted GaAs,” Mat. Res. Soc. Symp. Proc., 300, 323-330, 1993.

H.G. Robinson, K.S. Jones, M.D. Deal and C.J. Hu, “Time Dependent Diffusion of p-Type Dopants in GaAs,” Mat. Res. Soc. Symp. Proc., 300, 397-408, 1993.

K.S. Jones, J. Listebarger, J. Liu, H.L. Meng, M.E. Law and J.A. Slinkman, “Developing Dislocation Loops as Point Defect Detectors in Silicon,” 3rd International Symposium on Process Physics and Modeling, Honolulu, ed. Srinavasen, Taniguchi, and Murthy, ECS Press, 236-242, 1993.

K.S. Jones, J. Listebarger, J. Liu, M. Meng, M.E. Law, and J.A. Slinkman, “Developing Dislocation Loops as Point Defect Detectors in Silicon,” Spring Electrochemical Society Proceeding, Honolulu, 1043, 1993

T.E. Haynes, C. Lee, and K.S. Jones, “Time-Resolved Reflectivity Study of Solid Phase Epitaxial Regrowth in Relaxed and Strained Si1-xGex Epilayers,” Mat. Res. Soc. Symp. Proc., 281, 479-484, 1993.

P.W. Wisk, C.R. Abernathy, S.J. Pearton, A. Katz, F. Ren, J.R. Lothian and K.S. Jones, “Growth of GaN, AlN and InN by Metalorganic Molecular Beam Epitaxy Using ECR Generated Nitrogen Plasmas,” Mat. Res. Soc. Symp. Proc., 282, 599-604, 1993.

K.S. Jones, H.L. Meng, B. Zhu, H.G. Robinson, M.E. Law and S. Prussin, “Using Implantation Induced Dislocation Loops as Detectors of Interstitial Injection During Oxidation of Silicon,” Proceedings of the International Conference on Beam Processing of Advanced Materials, TMS/ASM International, Materials Park, OH, 73, 697-704, 1993.

J.E. Yu, K.C. Chou, B. Pathangey, K.S. Jones and T.J. Anderson, “Characteristics of In0.5Ga0.5P/GaAs Grown at High Temperature Using Low-Pressure MOVPE,” Mat. Res. Soc. Symp. Proc., 312, 1993.

H.L. Meng, J. Chen, H.G. Robinson, M.E. Law, J.A. Slinkman and K.S. Jones, “Using Oxidation to Study the Reaction Between Point Defects and Dislocation Loops,” Proceedings of the Electrochem. Soc., 93-6, 236-42, 1993.

H. Park, K.S. Jones, Slinkman, J.A. and Law, M.E., “The Effect of Strain on Dopant Diffusion in Silicon,” Technical Digest of the International Electron Devices Meeting, 303-306, 1993.

K.S. Jones, H.G. Robinson, T.E. Haynes, M.D. Deal, C.C. Lee and E.L. Allen, “Defects and Diffusion in Si+ Implanted GaAs,” Mat. Res. Soc. Symp. Proc., 300, 323-330, 1993.

H.G. Robinson, K.S. Jones, M.D. Deal and C.J. Hu, “Time Dependent Diffusion of p-Type Dopants in GaAs,” Mat. Res. Soc. Symp. Proc., 300, 397-408, 1993.

K.S. Jones, J. Listebarger, J. Liu, H.L. Meng, M.E. Law and J.A. Slinkman, “Developing Dislocation Loops as Point Defect Detectors in Silicon,” 3rd International Symposium on Process Physics and Modeling, Honolulu, ed. Srinavasen, Taniguchi, and Murthy, ECS Press, 236-242, 1993.

K.S. Jones, J. Listebarger, J. Liu, M. Meng, M.E. Law, and J.A. Slinkman, “Developing Dislocation Loops as Point Defect Detectors in Silicon,” Spring Electrochemical Society Proceeding, Honolulu, 1043, 1993.