D. L. Brown et al., “Stability of epitaxial pseudocubic group IV-V semiconductors,” J. Vac. Sci. Technol. B, vol. 37, 050602, 2019.

C. S. C. Barrett et al., “Dissolution of antiphase domain boundaries in GaAs on Si(001) via post-growth annealing,” J. Mater. Sci., vol. 54, no. 9, pp. 7028–7034, 2019.

Z. N. Weinrich et al., “Dopant-defect interactions in highly doped epitaxial Si?: P thin fi lms,”Thin Solid Films. vol. 685, no. May, pp. 1–7, 2019.

P. G. Whiting et al., “Peak shape analysis of deep level transient spectra?: An alternative to the Arrhenius plot,” Journal of Materials Research. 2019.