L. Jiang, S. S. Li, N.-T. Yeh, J.-I. Chyi, C. E. Ross and K. S. Jones, “In_0.6Ga_0.4As/GaAs quantum-dot infrared photodetector with operating temperature up to 260 K,” Appl. Phys. Lett. 82, 1986 (2003).

A. C. King, A. F. Gutierrez, A. F. Saavedra, K. S. Jones, and D. F. Downey, “Defect evolution of low energy, amorphizing germanium implants in silicon,” J. Appl. Phys. 93, 2449 (2003).

F. C. Hou, G. Bosman, and M. E. Law, “Simulation of oxide trapping noise in submicron n-channel MOSFETs,” IEEE Trans. Electron Devices 50, 846 (2003).

L. S. Adam, C. Bowen, and M. E. Law, “On implant-based multiple gate oxide schemes for system-on-chip integration,” IEEE Trans. Electron Devices 50, 589 (2003).

Z. Insepov, L. P. Allen, C. Santeufemio, K. S. Jones, and I. Yamada, “Computer modeling and electron microscopy of silicon surfaces irradiated by cluster ion impacts,” Nucl. Instrum. Methods Phys. Res. B 202, 261 (2003).

J. E. Sanchez, G. Bosman, and M. E. Law, “Two-dimensional semiconductor device simulation of trap-assisted generation-recombination noise under periodic large-signal conditions and its U=use for developing cyclostationary circuit simulation models,” IEEE Trans. Electron Devices 50, 1353 (2003).

J. M. Jacques L. S. Robertson, K. S. Jones, M. E. Law, M. J. Rendon, and J. Bennett, “Fluorine-enhanced boron diffusion in amorphous silicon,” Appl. Phys. Lett. 82, 3469 (2003).

Z. Insepov, L. P. Allen, C. Santeufemio, K. S. Jones, and I. Yamada, “Crater formation and sputtering by cluster impacts,” Nucl. Instrum. Methods Phys. Res. B 206, 846 (2003).

R. T. Crosby, K. S. Jones, M. E. Law, A. N. Larsen, and J. L. Hansen, “{311} defect evolution in Si-implanted Si_1-xGe_x alloys,” Mater. Sci. Semicond. Process. 6, 205 (2003).

L. P. Allen, T. G. Tetreault, C. Santeufemio, X. Li, W. D. Goodhue, D. Bliss, M. Tabat, K. S. Jones, G. Dallas, D. Bakkan, and C. Sung, “Gas cluster ion beam smoothing of chemo-mechanical polish processed GaSb(100) substrates”, J. Electron. Mater. 32, 842 (2003).