Minchang Liang & M.E. Law, “The importance of including lattice self-heating and hot-carrier transport in BJT simulation,” Bipolar/BiCMOS Circuits and Technology Meeting, 1994., Proceedings of the 1994, 187-190, October 1994.

S. Cea & M.E. Law, “Two dimensional simulation of silicide growth and flow,” Numerical Modeling of Processes and Devices for Integrated Circuits, 1994., NUPAD V., International Workshop on, 113-116, June 1994.

Chih-Chuan Lin & M.E. Law, “Mesh adaption and flux discretizations for dopant diffusion modeling,” Numerical Modeling of Processes and Devices for Integrated Circuits, 1994., NUPAD V., International Workshop on, 151-154, June 1994.

K.S. Jones, H.G. Robinson, C. Jasper, W. Cronin and M. Durlam, “TEM Analysis of Interfacial Reactions Between Ti-W-N, W-N Gate Metalizations and GaAs in MESFET Devices,” Mat. Res. Soc. Symp. Proc., 319, 81-86, 1994.

C. Jasper, S. Klingbeil, K.S. Jones and H.G. Robinson, “The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in Gallium Arsenide,” Mat. Res. Soc. Symp. Proc., 316, 337-342, 1994.

H.G. Robinson and K.S. Jones, “The Effect of Mass Resolution During Ion Implantation on Defect Formation and Electrical Properties in GaAs,” Mat. Res. Soc. Symp. Proc., 316, 3?7-343, 1994.

J. Chen, H.G. Robinson, S.B. Herner and K.S. Jones, “Effect of Oxygen on Point Defect Injection During Silicidation of Titanium,” Seventh International Symposium on Silicon Materials Science and Technology, Proceeding of the Electrochemical Society, 94-10, 1029-1040, 1994.

S. Bharatan, K.S. Jones, S.J. Pearton, C.R. Abernathy, and F. Ren, “Structural Characterization of GaN Grown by Electron Cyclotron Resonance-Metalorganic Molecular Beam Epitaxy (ECR-MOMBE),” Mat. Res. Soc. Symp. Proc., 339, 491-496, 1994.

J. Chen, H.G. Robinson, S.B. Herner and K.S. Jones, “The Influence of Oxygen on the Kinetics of Dislocation Loops During Silicidation,” Mat. Res. Soc. Symp. Proc., 337, 491-496, 1994.

J.R. Kim, R.M. Park, and K.S. Jones, “Thermal Expansion Behavior of ZnSe and ZnS0.03Se0.97 Epilayers on GaAs at Temperatures in the Range, 25oC – 250oC,” Mat. Res. Soc. Symp. Proc., 340, 475-480, 1994.

P.H. Holloway, J.E. Yu, P. Rack, J. Sebastian, S. Jones, T. Trottier, K.S. Jones, B. Pathangey, T.J. Anderson, S.-S. Sun, R. Tuenge, E. Dickey and C.N. King, “Blue and Yellow Light Emitting Phosphors for Thin Film Electroluminescent Displays,” Mat. Res. Soc. Symp. Proc., 345, 289-298, 1994.

S.B. Herner, V. Krishnamoorthy, H.G. Robinson and K.S. Jones, “The Effect of Titanium Silicidation on Type II End-of-Range Dislocation Loops,” Mat. Res. Soc. Symp. Proc., 337, 469-473, 1994.

H.G. Robinson, C.C. Lee, M.D. Deal, T.E. Haynes, E.L. Allen, and K.S. Jones, “Sputtering Induced Changes in Defect Morphology and Dopant Diffusion for Si Implanted GaAs: Influence of Ion Energy and Implant Temperature,” Mat. Res. Soc. Symp. Proc., 354, 337-342, 1994.

C.J. Santana, C.R. Abernathy, S.J. Pearton, and K.S. Jones, “MOMBE Growth of GaP-Based Materials on Si: Surface Preparation and Nucleation,” Mat. Res. Soc. Symp. Proc., 357, 1994.

J.D. MacKenzie, C.R. Abernathy, S.J. Pearton, S. Bharatan, and K.S. Jones, “AlN Grown by Metalorganic Beam Epitaxy Using ECR Nitrogen Plasma Source,” Mat. Res. Soc. Symp. Proc., 363, 213-218, 1994.