H.P. Maruska, R. Sudharsanan, E. Bretschneider, A. Davydov, J.E. Yu, B. Pathangey, K.S. Jones, and T.J. Anderson, “Carrier Confinement Effects in Epitaxial Silicon Quantum Wells Prepared by MOCVD,” Mat. Res. Soc. Symp. Proc., 358, 987-992, 1995.

P.H. Holloway, J.J. Fijol, R.M. Park, L.C. Calhoun, K.S. Jones, J.H. Simmons, P. Zory and T.J. Anderson, “Growth, Doping and Electrical Contacts to ZnSe-Based Devices,” The Electrochemical Society, 94-34, 2-11, 1995.

R.H. Thompson, Jr., V. Krishnamoorthy, J. Liu and K.S. Jones, “Type II Dislocation Loops and Their Effect on Strain in Ion Implanted Silicon as Studied by High Resolution X-Ray Diffraction,” Mat. Res. Soc. Symp. Proc., 378, 635-640, 1995.

K.S. Jones and M.J. Antonell, “The Effects of Rapid Recrystallization and Ion Implanted Carbon on the Solid Phase Epitaxial Regrowth of Si1-xGex Alloy Layers on Silicon,” Mat. Res. Soc. Symp. Proc., 379, 453-459, 1995.

J. Liu and K.S. Jones, “A Study of Loop Evolution During Inert Ambient Annealing and Reaction Between Point Defects and Dislocation Loops During Oxidation of Silicon,” Mat. Res. Soc. Symp. Proc., 354, 293-298, 1995

J. Liu and K.S. Jones, “Evolution of Dislocation Loops in Si in an Inert Ambient,” Solid State Electronics, 38, 1305-1312, 1995.

S.B. Herner, H.-J. Gossmann, K.S. Jones, “Titanium Silicidation Induced Point Defects in Si,” Mat. Res. Soc. Symp. Proc., 402, 143-148, 1995.

S. Chaudhry, R. Thompson, K.S. Jones and M.E. Law, “A Two-Dimensional Model of Strain from Dislocation Loops in Ion Implanted Silicon,” Extended Abstracts of the Spring Electrochemical Society, 448-449, 1995.