L.P. Allen, M. Farley, R. Datta, K.S. Jones, V. Krishnamoorthy, J.Y. Krska, J.U. Yoon & J.E. Chung, “Fundamental material analysis and SIMOX improvement as a function of independent implant parameter control,” SOI Conference, 1996. Proceedings., 1996 IEEE International, p. 32-33, September 1996.

O. Dokumaci & M.E. Law, “An interpolation technique for the numerical solution of the rate equations in extended defect simulation,” Simulation of Semiconductor Processes and Devices, 1996. SISPAD ’96. 1996 International Conference on, p. 37-38, September 1996.

S. Cea & M. Law, “Three dimensional nonlinear viscoelastic oxidation modeling,” Simulation of Semiconductor Processes and Devices, 1996. SISPAD ’96. 1996 International Conference on, p. 97-98, September 1996.

V. Krishnamoorthy, B. Beaudet, K.S. Jones & D. Venables, “Energy dependence of transient-enhanced-diffusion in low energy high dose arsenic implants in silicon,” Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 638-641, June 1996.

Jingwei Xu & M.E. Law, “A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon,” Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 630-633, June 1996.

J. Liu, V. Krishnamoorthy, K.S. Jones, M.E. Law, J. Shi & J. Bennett, “Transient enhanced diffusion and defect studies in B implanted Si,” Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 626-629, June 1996.

K.S. Jones, K. Moller, J. Chen, M. Puga-Lambers, M. Law, D.S. Simmons, P. Chi, B. Freer, J. Bernstein, L. Rubin, R. Simonton, R.G. Elliman, M. Petravic & P. Kringhoj, “The effect of end of range loops on transient enhanced diffusion in Si,” Ion Implantation Technology. Proceedings of the 11th International Conference on, p. 618-621, June 1996.

O. Dokumaci, M.E. Law, V. Krishnamoorthy, and K.S. Jones, “Effects of Arsenic Deactivation on Arsenic-Implant Induced Enhanced Diffusion in Silicon,” Mat. Res. Soc. Symp. Proc., 396, 167-172, 1996.

S.B. Herner, K.S. Jones, H.-J. Gossmann, R.T. Tung, J.M. Poate, and H.S. Luftman, “The Effect of TiSi2 Film Thickness and Growth on the Point Defect Perturbance in Si,” Proceedings of Spring Electrochem. Soc. Meeting, 96-4, 337-347, 1996.

M.E. Law and K.S. Jones, “{311} Defect Formation and Evolution for Si and B Implants,” Proceedings of Spring Electrochem. Soc. Meeting, 96-4, 374-378, 1996.

K.S. Jones, J. Liu, and L. Zhang, “Evidence of Two Sources of Interstitial for TED in Boron Implanted Silicon,” Proceedings of Spring Electrochem. Soc. Meeting, 96-4, 116-126, 1996.

V. Krishnamoorthy, D. Venables, K. Moeller, K.S. Jones, and B. Freer, “Effect of Energy and Dose on Transient-Enhanced Diffusion and Defect Microstructure in Low-Energy High-Dose As+ Implanted Si,” Mat. Res. Soc. Symp. Proc., 438, 21, 1996.

Mark E. Law, Kevin S. Jones, Aaron D. Lilak, and Susan K. Earles, “Models of Evolution of Damage From Ion Implantation into Silicon,” MRS Proceedings, 438, 45, 1996.

S. Brad Herner, Kevin S. Jones, V. Krishnamoorthy, Toshi K. Mogi, Michael O. Thompson, and Hans J. Gossman, “Enhanced Dissolution of Extrinsic Dislocation Loops in Silicon With a Silicon Nitride Film,” MRS Proceedings, 442, 157, 1996.

R. Datta, V. Krishnamoorthy, L.P. Allen, R. Chardonnet, M. Farley and K.S. Jones, “Effect of Oxygen Dose Variation on the SIMOX Microstructure,” Mat. Res. Soc. Symp. Proc., 446, 207-212, 1996.

O.M. Kryliouk, T.W. Dann, T.J. Anderson, H.P. Maruska, L.D. Zhu, J.T. Daly, M. Lin, P. Norris, H.T. Chai, D.W. Kisker, J.H. Li, K.S. Jones, “MOCVD Growth of GaN Films on Lattice-Matched Oxide Substrates,” Mat. Res. Soc. Symp. Proc., 449, 123-128, 1996.

Steve J. Pearton, S. Bendi, V. Krishnamoorthy, Kevin S. Jones, R.G. Wilson, Fan Ren, R.F. Karlicek, and R.A. Stall, “Hydrogen Diffusion and Passivation in GaN/InGaN Double Heterostructures,” MRS Proceedings, 449, 993, 1996.