Conference Presentations (1998)

J. Liu, D.F. Downey, K.S. Jones & E. Ishida, “Fluorine effect on boron diffusion: chemical or damage?” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 951-954, June 1998.

E. Ishida, D.F. Downey, K.S. Jones & J. Liu, “The chemical effect of fluorine on boron transient enhanced diffusion,” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 909-912, June 1998.

D.F. Downey & K.S. Jones, “The role of extended defects on the formation of ultra-shallow junctions in ion implanted 11B+,49BF2,76As+ and 31p+,” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 897-901, June 1998.

K.S. Jones, D. Downey, H. Miller, J. Chow, J. Chen, M. Puga-Lambers, K. Moller, M. Wright, E. Heitman, J. Glassberg, M. Law, L. Robertson & R. Brindos, “Transient enhanced diffusion in low energy arsenic implanted silicon,” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 841-844, June 1998.

C. Jasper, A. Hoover & K.S. Jones, “Defect formation in MeV ion implantation of boron and phosphorus,” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 704-707, June 1998.

H.J. Miller, C. Jasper, T.C. Smith, A. Hoover & K.S. Jones, “MeV implanted boron and phosphorus photoresist penetration tests,” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 1, p. 513-516, June 1998.

M.J. Caturla, A. Lilak, M.D. Johnson, M. Giles, T. Diaz de la Rubia, M. Law, & M. Foad, “Atomic scale modeling of boron transient diffusion in silicon,” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 1022-1025, June 1998.

K.S. Jones, D. Downey, H. Miller, J. Chow, J. Chen, M. Puga-Lambers, K. Moller, M. Wright, E. Heitman, J. Glassberg, M. Law, L. Robertson, & R. Brindos, “Transient enhanced diffusion in low energy arsenic implanted silicon,” Ion Implantation Technology Proceedings, 1998 International Conference on, Vol. 2, p. 841-844, June 1998.

Jing-Hong Li and Kevin S. Jones, “The Effect of a Thin Sample on the Extended Defect Evolution in Si+ Implanted Si,” Mat. Res. Soc. Symp. Proc., 490, 47-60, 1998.

R. Raman, M.E. Law, V. Krishnamoorthy and K.S. Jones, “Effect of the End of Range Loop on the Evolution of {311} Defects,” Mat. Res. Soc. Symp. Proc., 532, 61-66, 1998.

Michelle Griglione, Tim Anderson, Yaser Haddara, Mark Law and Kevin Jones, “Interdiffusion Behavior of Si/Si1-xGex Layers in Inert and Oxidizing Ambients,” Mat. Res. Soc. Symp. Proc., 532, 119-124, 1998.

S. Bharatan, Y.M. Haddara, M.E. Law and K. S. Jones, “Determining of the Enthalpy of Formation of a Si Interstitial Using Quantitative TEM and SIMS,” Mat. Res. Soc. Symp. Proc., 532, 111-118, 1998.

Aaron D. Lilak, Mark E. Law, Kevin S. Jones, Martin D. Giles, Ebrahim Andideh, Maria-Jose Caturla, Tomas Diaz de la Rubia, Jing Zhu and Silva Theiss, “Predictive Simulation of Transient Activation Processes in Boron-Doped Silicon,” 1998 International Electron Device Meeting, 493-496, 1998