Conference Presentations (2000)

L.S. Adam, M.E. Law, O. Dokumaci & S. Hedge, “A physical model for implanted nitrogen diffusion and its effect on oxide growth,” Electron Device Meeting, IEDM Technical Digest. International. San Francisco, CA, p. 507-510, December 2000

Mark E. Law, Kevin S. Jones, “A New Model for {311} Defects Based on In-Situ Measurement Electron Device Meeting, IEDM Technical Digest. International. San Francisco, CA, p. 511-514, December 2000

C. Pladdy, I. Avci, & M.E. Law, “Optimum node positioning in adaptive grid refinement and the Delaunay-Voronoi algorithm [semiconductor process simulation],” Simulation of Semiconductor Processes and Devices, 2000. SISPAD 200. 2000 International Conference on, p. 222-224, September 2000

I. Avci, H.A. Rueda & M.E. Law, “Model for the evolution of dislocation loops in silicon,” Simulation of Semiconductor Processes and Devices, 2000. SISPAD 200. 2000 International Conference on, p. 210-213, September 2000

L.S. Robertson, P.N. Warnes, K.S. Jones, S.K. Earles, M.E. Law, D.F. Downey, S. Falk, and J. Liu, “Junction Depth Reduction of Ion Implanted Boron in Silicon Through Fluorine Ion Implantation,” Mat. Res. Soc. Symp. Proc., 610, B4.2.1-6, 2000.

Aaron D. Lilak, Viswanath Krishnamoorthy, David Vieira, Mark Law, Kevin Jones, “A Study of Boron Clustering Transients and Mechanisms in Doped Silicon,” Mat. Res. Soc. Symp. Proc., 610, B.5.4.1-3, 610, 2000.

L.S. Robertson, R. Brindos, K.S. Jones, M.E. Law, D.F. Downey, S. Falk, J. Liu, “The Effect of Impurities on Diffusion and Activation of Ion Implanted Boron in Silicon,” Mat. Res. Soc. Symp. Proc., 610, B5.8.1-6, 2000.

Omer Dokumaci, Paul Ronsheim, Suri Hegde, Dureseti Chidambarrao, Lahir Shaik-Adam, and Mark E. Law, “Effect of Nitrogen Implants on Boron Transient Enhanced Diffusion,” Mat. Res. Soc. Symp. Proc., 610, B5.9.1-6, 2000.

P.H. Keys, R. Brindos, V. Krishnamoorthy, M. Puga-Lambers, K.S. Jones, M.E. Law, “Phosphorus/Silicon Interstitial Annealing After Ion Implantation,” Mat. Res. Soc. Symp. Proc., 610, B6.6.1-6, 2000.

Hugo Saleh, Mark E. Law, Sushil Bharatan, Kevin S. Jones, Wish Krishnamoorthy, Temel Buyuklimani, “Energy Dependence of Transient Enhanced Diffusion and {311} Defect Kinetics,” Mat. Res. Soc. Symp. Proc., 610, B6.7.1-5, 2000.

Mark E. Law, Michelle D. Griglione, and Misty Northridge, “Influence of Carbon on the Diffusion of Interstitials and Boron in Silicon,” Mat. Res. Soc. Symp. Proc., 610, B.7.4.1-6, 2000.

R. Brindos, P.H. Keys, M. Griglione, K.S. Jones, M.E. Law, Aditya Agarwal, Ebrahim Andideh, “Reaction of Excess Silicon Interstitials in the Presence of Arsenic and Germanium,” Mat. Res. Soc. Symp. Proc., 610, B.8.4.1-6, 2000.

C.D. Lindfors, K.S. Jones, M.E. Law, D.F. Downey and R.W. Murto, “Boron Activation During Solid Phase Epitaxial Regrowth,” Mat. Res. Soc. Symp. Proc., 610, B10.2.1-6, 2000.

Heather Banisaukas, Kevin S. Jones, Somit Talwar, Scott Falk and Dan F. Downey, “Defect Reduction in Laser Thermal Processing,” Mat. Res. Soc. Symp Proc.., 610, B10.3.1-6, 2000.

Susan Earles, Mark Law, Kevin Jones, Rich Brindos and Somit Talwar, “Effects of Nonmelt Laser Annealing on 5keV Boron Implant in Silicon,” Mat. Res. Soc. Symp. Proc., 610, B10.5.1-5, 2000.

G. Subramanian, K.S. Jones, M.E. Law, M.J. Caturla, S. Theiss and T. Diaz de la Rubia, “Relative Stability of Silicon Self-Interstitial Defects,” Mat. Res. Soc. Symp. Proc., 610, B11.10.1-6, 2000.

Kevin S. Jones, Erik Kuryliw, Robert Murto, Michael Rendon and Somit Talwar, “Boron Diffusion upon Annealing of laser Thermal Processed Silicon,” 2000 International Conference Ion Implantation Technology Proceedings, 111-114, 2000.

L.S. Robertson, P.N. Warnes, M.E. Law, K.S. Jones, D. F. Downey and J. Liu, “The Role of Fluorine on Reducing TED in Boron Implanted Silicon,” 2000 International Conference Ion Implantation Technology Proceedings, 171-174, 2000.

Robert Murto, Kevin Jones, Michael Rendon and Somit Talwar, “Activation and Deactivation Studies of Laser Thermal Annealed Boron, Arsenic, Phosphorus, and Antimony Ultra-Shallow Abrupt Junctions,” 2000 International Conference Ion Implantation Technology Proceedings, 155-158, 2000.

Robert Murto, Kevin Jones, Michael Rendon and Somit Talwar, “An Investigation of Species Dependence in Germanium Pre-amorphized and Laser Thermal Annealed Ultra-Shallow Abrupt Junctions,” 2000 International Conference Ion Implantation Technology Proceedings, 182-185, 2000.

Peter Borden, Clarence Furguson, David Sing, Larry Larson, Laurie Bechtler, Kevin Jones and Peter Gable, “In-line Characterization of Preamorphous Implants (PAI),” 2000 International Conference Ion Implantation Technology Proceedings, 635-638, 2000.