R.R. Robison & M.E. Law, “Fluorine diffusion: models and experiments,” Electron Devices Meeting, 2002. IEDM ’02. Digest. International, p. 883-886, December 2002.

K.S. Jones, S.P. Crane, C.E. Ross, T. Malmborg, D. Downey & E. Arevalo, “The role of pre-anneal conditions on the microstructure of Ge/sup +/implanted Si after high temperature milli-second flash annealing,” Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on, p. 22-27, September 2002.

Renata A. Camillo-Castillo, Kevin S. Jones, Mark E. Law, and Leonard M. Rubin, “Study of the Effects of a Two-Step Anneal on the End of Range Defects in Silicon,” Mat. Res. Soc. Symp. Proc., 717, C1.4, p. 21-26, 2002.

Robert Crosby, Jackie Frazier, K.S. Jones, M.E. Law, A. Nylandsted Larsen, and J. Lundsgaard Hansen, “The Effect of Ge Content in MBE Si(1-x) Ge(x) on the Evolution of {311} Defects,” Mat. Res. Soc. Symp. Proc., 717, C1.6, p. 27-31, 2002.

Erik Kuryliw, Kevin S. Jones, David Sing, Michael J. Rendon, and Somit Talwar, “Effect of Laser Thermal Processing on Defect Evolution in Silicon,” Mat. Res. Soc. Symp. Proc., 717, C1.9, p. 39-44, 2002.

K.A. Gable, K.S. Jones, M.E. Law, L.S. Robertson, and S. Talwar, “Electrical and Structural Characterization of Boron Implanted Silicon Following Laser Thermal Processing,” Mat. Res. Soc. Symp. Proc. Vol. 717, C1.10, p. 45-50, 2002.

Mark H. Clark, Kevin S. Jones, Michael Rendon, and Kevin A. Gable, “Laser Thermal Processing of Alternate Dopants in Silicon,” Mat. Res. Soc. Symp. Proc., 717, C1.11, p.51-56, 2002.

A. Saavedra, J. Frazier, D. Wrigley, K. S. Jones, I. Avci, S. Earles, M. Law, and E. Jones, “Silicon Self-Interstitial Cluster Formation and Dissolution in SOI,” Mat. Res. Soc. Symp. Proc., 717, C2.5, p. 95-100, 2002.

J.M. Jacques, L.S. Robertson, K.S. Jones, Joe Bennett, and Mike Rendon, “Effect of Flourine on the Diffusion of Boron in Amorphous Silicon,” Mat. Res. Soc. Symp. Proc., 717, C4.6, p. 175-180, 2002.

Ibrahim Avci and Mark E. Law, “Modeling Dislocation Loop Nucleation and Evolution in Germanium, Arsenic, and Boron Implanted Silicon,” Mat. Res. Soc. Symp. Proc., 717, C5.9.1-6, 2002.

Z. Insepov, L.P. Allen, C. Santeufemio, K.S. Jones, and I. Yamada, “Computer Modeling and Electron Microscopy of Silicon Surfaces Irradiated by Cluster Ion Impacts,” 6th International Conference on Computer Simulation of Radiation Effects in Solids (COSIRES 2002), Dresden, Germany, June 2002.

Craig Jasper, Leonard Rubin, Chad Lindfors, Kevin S. Jones, and Jungwoo Oh, “Electrical Activation of Implanted Single Crystal Germanium Substrates,” 14th International Conference on Ion Implantation Technology, September 2002.

Kevin S. Jones, Daniel F. Downey, Jeff Gelpey and Tony Fiory, “The Effect of Vortek Flash Lamp Annealing on the Evolution of Implantation Induced Dislocation Loops,” 14th International Conference on Ion Implantation Technology, September 2002.

Susan Felch, John Borland, Ziwei Fang, Bon-Woong Koo, Hans Gossmann, Kevin Jones and Chad Lindfors, “Optimized BF3 P2LAD Implantation With Si-PAI For Shallow, Abrupt and High Quality p+/n Junctions Formed Using Low Temperature SPE Annealing,” 14th International Conference on Ion Implantation Technology, September 2002.