R. A. Camillo-Castillo, M. E. Law, K. S. Jones, and L. M. Rubin, “Influence of low temperature preanneals on the behavior of dopants and defects for low energy Ge preamorphized silicon,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).
K. A. Gable, L. S. Robertson, K.S. Jones, and M.E. Law, “The effect of pre-amorphization implant energy on boron ultra-shallow junction formation following laser thermal processing,” Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).
K. A. Gable, L. S. Robertson, K.S. Jones, and M.E. Law, “Strain compensation for boron ultra-shallow junction formation following laser thermal processing of ion implanted silicon,” Proceedings of Seventh International Workshop on: Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).
J. M. Jacques, K. S. Jones, D. Chan, S. Sinha, S. McCoy, J. Bennett, and M. Beebe, “Role of fluorine in rapid thermal processing methodologies,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).
C. E. Ross and K. S. Jones, “The effect of a patterned nitride layer on the evolution of implant-related damage in silicon,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).
A. F. Saavedra, A. C. King, K. S. Jones, and E. C. Jones, “Extended defect evolution in boron implanted silicon-on-insulator (SOI),” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).
R. Crosby, K. S. Jones, M. E. Law, A. N. Larsen, and J. L. Hansen, “{311} Defect evolution in ion-implanted, relaxed Si1-xGex,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).
A. C. King, A. F. Saavedra, K. S. Jones, and D. F. Downey, “Surface proximity effect on end-of-range damage of low energy Ge-Implantation,” International Workshop on Fabrication, Characterization, and Modeling of Ultra-Shallow Doping Profiles in Semiconductors (2003).