K. S. Jones and F. Amaud, “Process technology advances in source drain engineering,” IEEE Electron Devices Meeting (2004).

S. Earles, M. E. Law, K. S. Jones, J. Frazer, S. Talwar, D. Downey, and E. Arevalo, “Formation of ultrashallow junctions in 500 eV boron implanted silicon using nonmelt laser annealing,” International Conference on Advanced Thermal Processing of Semiconductors (2004).

M. E. Law, K. S. Jones, L. Radic, R. T. Crosby, M. Clark, K. Gable, and C. Ross, “Process modeling for advanced devices,” Materials Research Society Spring Meeting (2004).

R. Crosby, A. F. Saavedra, and K. S. Jones, “Strain relaxation of ion-implanted strained silicon on relaxed SiGe,” Materials Research Society Spring Meeting (2004).

N. Burbure and K.S. Jones, “The effect of oxide trenches on defect formation and evolution in ion-implanted silicon,” Materials Research Society Spring Meeting (2004).

R. T. Crosby, K. S. Jones, M. E. Law, P. E. Thompson, J. Liu, A. Saavedra, and M. Klimov, “BIC formation and boron diffusion in Si_0.8Ge_0.2,” Materials Research Society Spring Meeting (2004).

A. F. Saavedra, K. S. Jones, M. E. Law, and K. K. Chan, “Concentration dependence of boron interstitial cluter dormation in silicon-on-insulator (SOI),” Materials Research Society Spring Meeting (2004).

R. R. Robison, A. F. Saavedra, and M. E. Law, “Diffusion of fluorine at high concentration in silicon: experiments and models,” Materials Research Society Spring Meeting (2004).

L. Radic, A. D. Lilak, and M. E. Law, “Modeling B clustering in Si and SiGe,” Materials Research Society Spring Meeting (2004).

J. M. Jacques, N. Burbure, K. S. Jones, M. E. Law, L. S. Robertson, D. E. Downey, L. M. Rubin, J. Bennett, M. Beebe, and M. Klimov, “Enhanced boron diffusion in amorphous silicon,” Materials Research Society Spring Meeting (2004).

C. Ross and K. S. Jones, “The role of stress on the shape of the amorphous-crystalline interface and mask-edge defect formation in ion-implanted silicon,” Materials Research Society Spring Meeting (2004).