Lind, A. G., Jones, K. S., & Hatem, C. (2014). “Activation and defect dissolution of non-amorphizing, elevated temperature Si+ implants into In0.53Ga0.47As (pp. 1–3).” Presented at the Ion Implantation Technology (IIT), 2014 20th International Conference on, IEEE. http://doi.org/10.1109/IIT.2014.6939962

A.G. Lind, K.S. Jones, C. Hatem “Activation of low-dose Si+ implant into In0.53Ga0.47As with Al+ and P+ co-implants”Ion Implantation Technology (IIT), 2014 20th International Conference on, 1-2