J. R. Pfiester, M. E. Law, R. W. Dutton, “Improved MOSFET short-channel device using germanium implantation,” IEEE Electron Device Lett. 9, 343 (1988).

M. E. Law and R. W. Dutton, “Verification of analytic point defect models using SUPREM-IV [dopant diffision],” IEEE Trans. Computer-Aided Design Integr. Circuits Syst. 7, 181 (1988).

K. S. Jones, D. K. Sadana, S. Prussin, J. Washburn, and E. R. Weber, “The formation of a continuous amorphous layer upon room temperature implantation of silicon with boron,” J. Appl. Phys. 63, 1414 (1988).

K. S. Jones, S. Prussin, and E.R. Weber, “A systematic analysis of defects in ion implanted silicon,” (Invited Article) Appl. Phys. A 45, 1 (1988).