J. E. Yu and K. S. Jones, “Electron microscopy of post-growth induced defects in ZnSe/GaAs epilayers,” J. Electron. Mater. 22, 239 (1993).

A. Katz, A. Feingold, S. Nakahara, S. J. Pearton, E. Lane, and K. S. Jones, “Microstructural study of low resistivity TiN_x formed by TRMOCVD onto InP,” Semicond. Sci. Technol. 8, 450 (1993).

C. C. Lin, M. E. Law, and R. E. Lowther, “Automatic grid refinement and higher order flux discretizations for diffusion modeling,” IEEE Trans. Computer-Aided Design 12, 1209 (1993).

J. P. John and M. E. Law, “Oxidation enhanced diffusion of phosphorus in heavily doped background concentrations,” J. Electrochem. Soc. 140, 1489 (1993).

J. P. John and M. E. Law, “Phosphorus diffusion in isoconcentration backgrounds under inert conditions in silicon,” Appl. Phys. Lett. 62, 1388 (1993).

H. L. Meng, S. Prussin, M. E. Law, and K. S. Jones, “A study of point defect detectors created by Si and Ge implantation,” J. Appl. Phys. 73, 955 (1993).

J. K. Listebarger, K. S. Jones, and J. A. Slinkman, “Use of type II (end of range) damage as detectors for quantifying interstitial fluxes in ion-implanted silicon,” J. Appl. Phys. 73, 4815 (1993).

C. Lee, T. E. Haynes, and K. S. Jones, “Kinetics of solid phase epitaxial regrowth in amorphized Si_0.88Ge_0.12 measured by time-resolved reflectivity,” Appl. Phys. Lett. 62, 501 (1993).

J. Fang, P. H. Holloway, J. E. Yu, K. S. Jones, B. Pathangey, E. Bretschneider, and T. J. Anderson, “MOCVD growth of non-expitaxial and epitaxial ZnS thin films,” Appl. Surf. Sci. 70, 701 (1993).

D. Venables and K. S. Jones, “Defect formation in high dose oxygen implanted silicon,” Nucl. Instrum. Methods Phys. Res. B 74, 65 (1993).