M.-Y. Chuang and M. E. Law, “A new algorithm for faster full-thermodynamic device simulations,’ IEEE Trans. Electron Devices 44, 1567 (1997).

S. Chaudhry and M.E. Law, “The stress assisted evolution of point and extended defects in silicon,” J. Appl. Phys. 82, 1138 (1997).

E. Chason, S. T. Picraux, J. M. Poate, J. O. Borland, M. I. Current, T. Diaz De La Rubia, D. J. Eaglesham, O. W. Holland, M. E. Law, C. W. Magee, J. W. Mayer, J. Melngailis, and A.F. Tasch, “Ion beams in silicon processing and characterization,” J. Appl. Phys. 81, 6513 (1997).

J. Liu, V. Krishnamoorthy, H.-J. Gossman, L. Rubin, M. E. Law, and K. S. Jones, “The effect of boron implant energy on transient enhanced diffusion in silicon,” J. Appl. Phys. 81, 1656 (1997).

J. Xu, V. Krishnamoorthy, K. S. Jones, and M. E. Law, “A comparison of boron and phosphorus diffusion and dislocation loop growth from silicon implants into silicon,” J. Appl. Phys. 81, 107 (1997).

K. S. Jones, K. Moller, J. Chen, M. Puga-Lambers, B. Freer, J. Berstein, and L. Rubin, “Effect of implant temperature on transient enhanced diffusion of boron regrown silicon after amorphization by Si⁺ or Ge⁺ implantation,” J. Appl. Phys. 81, 6051 (1997).

S. B. Herner, V. Krishnamoorthy, K. S. Jones, T. K. Mogi, M. O. Thompson, and H.-J. Gossmann, “Extrinsic dislocation loop behavior in silicon with a thermally grown silicon nitride film,” J. Appl. Phys. 81, 7175 (1997).

S. B. Herner and K. S. Jones, “Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi₂ film,” J. Appl. Phys. 82, 583 (1997).

K. S. Jones, J. Chen, S. Bharatan, J. Jackson, L Rubin, M. Puga-Lambers, and D. Venables, “The effect of dose rate and implant temperature on transient enhanced diffusion in boron implanted silicon,” J. Electron. Mater. 26, 1361 (1997).

S. M. Donovan, J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, F. Ren, K. S. Jones, and M. Cole, “InN-based ohmic contacts to InAIN,” Appl. Phys. Lett. 70, 2592 (1997).

L. S. Robertson, K. S. Jones, A. Lilak, M. E. Law, P. S. Kringhoj, L. M. Rubin, J. Jackson, D. S. Simons, and P. Chi, “The effect of dose rate on interstitial release from the end of range implant damage region in Si,” Appl. Phys. Lett. 71, 3105 (1997).

S. B. Herner, V. Krishnamoorthy, A. Naman, K. S. Jones, H.-J. Gossmann, and R. T. Tung, “Morphology of TiSi₂ films on Si formed from co-deposited Ti and Si,” Thin Solid Films 302, 127 (1997).

R. Datta, L. P. Allen, R. P. Dolan, K. S. Jones, and M. Farley, “Independent implant parameter effects on SIMOX SOI dislocation formation,” Mater. Sci. Eng. B 46, 8 (1997).

W. L. Warren, C. H. Seager, S.-S. Sun, A. Naman, P. H. Holloway, K. S. Jones, and E. Soininen, “Microstructure and atomic effects on the electroluminescent efficiency of SrS:Ce thin film devices,” J. Appl. Phys. 82, 5138 (1997).