M. S. Phen, V. Craciun, K. S. Jones, J. L. Hansen, and A. N. Larsen, “HRXRD studies of strain relaxation in ion-implanted strained Si on relaxed Si_1-xGe_x,” Nucl. Instrum. Methods Phys. Res. B 253, 22 (2006).

N.G. Rudawski, K.N. Siebein, and K.S. Jones, “Effect of uniaxial stress on solid phase epitaxy in patterned Si wafers,” Appl. Phys. Lett. 89, 082107 (2006).

J.-S. Lim, X. Yang, T. Nishida, and S. E. Thompson, “Measurement of conduction band deformation potential constants using gate direct tunneling current in n-type metal oxide semiconductor field effect transistors under mechanical stress,” Appl. Phys. Lett. 89, 073509 (2006).

D. P. Hickey, E. Kuryliw, K. Siebein, K. S. Jones, R. Chodelka, and R. Elliman, “Cross-sectional transmission electron microscopy method and studies of implant damage in single crystal diamond,” J. Vac. Sci. Technol. A 24, 1302 (2006).

X. Yang, J. Lim, G. Sun, K. Wu, T. Nishida, and S. E. Thompson, “Strain-induced changes in the gate tunneling currents in p-channel metal-oxide-semiconductor field-effect transistors,” Appl. Phys. Lett. 88, 052108 (2006).

R. A. Camillo-Castillo, M. E. Law, K. S. Jones, L. Radic, R. Lindsay, and S. McCoy, “Kinetics of the end of range damage dissolution in flash-assist rapid thermal processing,” Appl. Phys. Lett. 88, 232104 (2006).

R. A. Camillo-Castillo, M. E. Law, K. S. Jones, R. Lindsay, K. Maex, B. J. Pawlak and S. McCoy, “Application of flash-assist rapid thermal processing subsequent to low-temperature furnace anneals,” J. Vac. Sci. Technol. B 24, 450 (2006).

C. R. Olson, E. Kuryliw, B. E. Jones, and K. S. Jones, “Effect of stress on the evolution of mask-edge defects in ion-implanted silicon,” J. Vac. Sci. Technol. B 24, 446 (2006).