Peer-Reviewed Publications (2010)

C. Y. Chang, T. Anderson, J. Hite, D. J. Cheney, E. A. Douglas, B. P. Gila, F. Ren, G. D. Via, P. Whiting, R. Holzworth, K. S. Jones, S. Jang, and S. J. Pearton, “Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors,” J. Vac. Sci. Technol. B 28, 1044 (2010).

S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, “Effect of n- and p-type dopants on patterned amorphous regrowth,” J. Vac. Sci. Technol. B 28, C1F1 (2010).

P. A. Ronsheim, M. Hatzistergos, and S. Jin, “Dopant measurements in semiconductors with atom probe tomography,” J. Vac. Sci. Technol. B 28, C1E1 (2010).

A. Chen, J. R. Smith, K. L. Duncan, R. T. DeHoff, K. S. Jones, and E. D. Wachsman, “Effect of La₂Zr₂O₇ on interfacial resistance in solid oxide fuel cells,” J. Electrochem. Soc. 157, B1624 (2010).