A. G. Lind, N. G. Rudawski, N.J. Vito, C. Hatem, M.C. Ridgway, R. Hengstebeck, B. R. Yates, and K.S. Jones, “Maximizing electrical activation of ion-implanted Si in In0.53Ga0.47As” Appl. Phys. Lett. 103, 232102 (2013).

B. L. Darby, B. R. Yates, A. Kumar, A. Kontos, R. G. Elliman, and K. S. Jones, “Modeling Solid Phase Epitaxial Growth for Patterned Ge Substrates,” ECS J. Solid State Sci. Technol. 2, 130 (2013).

B. L. Darby, B. R. Yates, I. Martin-Bragado, J. L. Gomez-Selles, R. G. Elliman, and K. S. Jones, “Substrate orientation dependence on the solid phase epitaxial growth rate of Ge,” J. Appl Phys. 113, 033505 (2013).

N. G. Rudawski, B. R. Yates, M. R. Holzworth, K. S. Jones, R. G. Elliman, and A. A. Volinksy, “Ion beam-mixed Ge electrodes for high capacity Li rechargeable batteries,” J. Power Sources 223, 336 (2013).

M. R. Holzworth, N. G. Rudawski, P .G. Whiting, S. J. Pearton, K. S. Jones et al, “field-induced defect morphology in Ni-gate AlGaN/GaN high electron mobility transistors” Appl. Phys. Lett. 103, 023503 (2013).

J.L. Gomez-Selles, B.L. Darby, K.S. Jones, I. Martin-Bragado, “Lattice Kinetic Monte Carlo modeling of germanium solid phase epitaxial growth” Phys. Status Solidi.