Peer-Reviewed Publications (2008)

V. Moroz, I. Martin-Bragado, S. Felch, F. Nouri, C. Olsen, and K.S. Jones, “Dissolution of extended defects in strained silicon,” J. Vac. Sci. Technol. B 26, 439 (2008).

N. G. Rudawski, K. S. Jones, and R. Gwilliam, “Dopant-stress synergy in Si solid-phase epitaxy,” Appl. Phys. Lett., 92, 232110 (2008).

J. S. Moore, K. S. Jones, H. Kennel, and S. Corcoran, “3D analysis of semiconductor dopant distributions in a patterned structure using LEAP,” Ultramicrscopy 108, 536 (2008).

L. A. Edelman, M. S. Phen, K. S. Jones, R. G. Elliman, and L. M. Rubin, “Boron diffusion in amorphous silicon-germanium alloys,” Appl. Phys. Lett. 92, 172108 (2008).

L. A. Edelman, S. Jin, K. S. Jones, R. G. Elliman, and L. M. Rubin,”Effect of carbon codoping on boron diffusion in amorphous silicon,” Appl. Phys. Lett. 93, 072107 (2008).

J. H. Jang, M. S. Phen, A. Gerger, K .S. Jones, A. N. Larsen, and V. Craciun,“Structural characterization of strained silicon grown on a SiGe buffer layer,” Semicond. Sci. Technol. 23, 035012 (2008)

N. G. Rudawski, K. S. Jones, and R. Gwilliam, “Stressed solid-phase epitaxial growth of ion-implanted amorphous silicon,” (Invited Article) Mater. Sci. Eng. R 61, 40 (2008).

N. G. Rudawski, K. S. Jones, and R. Gwilliam, “Kinetics and morphological instabilities of stressed solid-solid phase transformations,” Phys. Rev. Lett. 100, 165501 (2008).

D. P. Hickey, Z. L. Bryan, K. S. Jones, R. G. Elliman, and E. E. Haller, “Defects in Ge and Si caused by 1 MeV Si⁺ implantation,” J. Vac. Sci. Technol. B 26, 425 (2008).

S. Morarka, N. G. Rudawski, and M. E. Law, “Level set modeling of the orientation dependence of solid phase epitaxial regrowth,” J. Vac. Sci. Technol. B 26, 357 (2008).

N. G. Rudawski, K. S. Jones, and R. G. Elliman, “Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers,” J. Vac. Sci. Technol. B 26, 435 (2008).