N. G. Rudawski and K. S. Jones, “Atomistic considerations of stressed epitaxial growth from the solid phase,” Scripta Mater. 61, 327 (2009).

N. G. Rudawski, K. S. Jones, S. Morarka, M. E. Law, and R. G. Elliman, “Stressed multidirectional solid-phase epitaxial growth of Si,” (Invited Article) J. Appl. Phys. 105, 081101 (2009).

S. Morarka, N. G. Rudawski, M. E. Law, K. S. Jones, and R. G. Elliman, “Modeling two-dimensional solid-phase epitaxial regrowth using level set methods,” J. Appl. Phys. 105, 053701 (2009).

N. G. Rudawski, K. S. Jones, and R. Gwilliam, “Stressed solid-phase epitaxial growth of (011) Si,” J. Mater. Res. 24, 305 (2009).

L. Romano, N. G. Rudawski, M. R. Holzworth, K. S. Jones, S. G. Choi, and S.T. Picraux, “Nanoscale manipulation of Ge nanowires by ion irradiation,” J. Appl. Phys. 106 114316 (2009).

L. Romano, K. S. Jones, K. Sekar, and W. A. Krull, “Amorphization of Si using cluster ions,” J. Vac. Sci. Technol. B 27, 597 (2009).

N. G. Rudawski, L. R. Whidden, V. Craciun, and K. S. Jones, “Amorphization and solid-phase epitaxial growth of C-cluster ion-implanted Si,” J. Electron. Mater. 38, 1926 (2009).

J. H. Jang, M. S. Phen, K. Siebein, K. S. Jones, and V. Craciun, “Observation of defects evolution in strained SiGe layers during strain relaxation,” Mater. Lett. 63, 289 (2009).

D. P. Hickey, K. S. Jones, and R.G. Elliman,“Amorphization and graphitization of single-crystal diamond – a transmission electron microscopy study,” Diamond Relat. Mater. 18, 1353 (2009).