K.S. Jones, N.G. Rudawski, I. Oladeji, R. Pitts, R. Fox, “The state of solid-state batteries” American Ceramic Society bulletin Cover Story, March 2012

B. R. Yates, B. L. Darby, D. H. Petersen, O. Hansen, R. Lin, P. F. Nielsen, L. Romano, B. L. Doyle, A. Kontos, and K. S. Jones, “Activation and thermal stability of ultra-shallow B⁺-implants in Ge,” J. Appl. Phys. 112, 12 (2012).

P.G. Whiting, N.G. Rudawski, M.R. Holzworth, S.J. Pearton, K.S. Jones, L. Liu, T.S. Kang, F. Ren, “Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors,” Microelectron. Reliab. 11, 2542 (2012).

B. R. Yates, B. L. Darby, R. G. Elliman, and K. S. Jones, “Role of nucleation sites on the formation of nanoporous Ge,” Appl. Phys. Lett. 101, 131907 (2012).

S.-T. Hung, C.-J. Chang, C.-H. Hsu, B. H. Chu, C. F. Lo, C.-C. Hsu, S. J. Pearton, M. R. Holzworth, P. G. Whiting, N. G. Rudawski, K. S. Jones, A. Dabiran, P. Chow, and F. Ren, “SnO₂ functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications,” Int. J. Hydrogen Energy 37, 13783 (2012).

R. Dieme, J. Zhang, N. G. Rudawski, K. Jones, G. Bosman, M. Sheplak, and T. Nishida, “Process dependence of 1/f noise and defects in ion implanted p-type piezoresistors,” J. Appl. Phys. 112, 033702 (2012).

S. Jin, K. S. Jones, M. E. Law, and R. Camillo-Castillo, “B segregation to grain boundaries and diffusion in polycrystalline Si with flash annealing,” J. Appl. Phys. 111, 044508 (2012).

N. G. Rudawski, B. L. Darby, B. R. Yates, K. S. Jones, R. G. Elliman, and A. A. Volinksy, “Nanostructured ion beam-modifed Ge films for high capacity Li ion battery anodes,” Appl. Phys. Lett. 100, 083111 (2012).

E. A. Douglas, C. Y. Chang, B. P. Gila, M. R. Holzworth, K. S. Jones, L. Liu, J. Kim, S. Jang, G. D. Via, F. Ren, and S. J. Pearton, “Investigation of the effect of temperature during off-state degradation of AlGaN/GaN high electron mobility transistors,” Microelectron. Reliab. 52, 23