Peer-Reviewed Publications (2017)

P. G. Whiting et al., “Erosion defect formation in Ni-gate AlGaN/GaN high electron mobility transistors,” Microelectron. Reliab., vol. 70, pp. 32–40, 2017.

P. G. Whiting et al., “Nanocrack formation in AlGaN/GaN high electron mobility transistors utilizing Ti/Al/Ni/Au ohmic contacts,” Microelectron. Reliab., vol. 70, pp. 41–48, 2017.

E. L. Kennon, T. Orzali, Y. Xin, A. Vert, A. G. Lind, and K. S. Jones (2017) “Deactivation of electrically supersaturated Te-doped InGaAs grown by MOCVD,” J. Mater. Sci. DOI: 10.1007/s10853-017-1254-8

T. P. Martin, K. S. Jones, R. A. Camillo-Castillo, C. Hatem, Y. Xin, and R. G. Elliman (2017) “Quantification of germanium-induced suppression of interstitial injection during oxidation of silicon,” J. Mater. Sci. DOI: 10.1007/s10853-017-1196-1

K. Haynes, R. Murray, Z. Weinrich, X. Zhao, D. Chiappe, S. Sutar, I. Radu, C. Hatem, S. S. Perry, K. S. Jones (2017)“Modulating the Resistivity of MoS2 through Low Energy Phosphorus Plasma Implantation,”Appl. Phys. Lett. http://aip.scitation.org/doi/abs/10.1063/1.4989829

Brewer, W. M., Xin, Y., Hatem, C., Diercks, D. R., Truong, V. Q., Jones, K. S (2017) “Lateral Ge Diffusion During Oxidation of Si/SiGe Fins” Nanoletters http://pubs.acs.org/doi/abs/10.1021/acs.nanolett.6b04407;

T.P. Martin, Aldridge, H. L. & Jones, K. S. (2017) “Use of a buried loop layer as a detector of interstitial flux during oxidation of SiGe heterostructures” Journal Vacuum Science and Technology A 35 021101 http://dx.doi.org/10.1116/1.4972516;