M. E. Law, “Grid adaption near moving boundaries in two-dimensions for IC process simulation,” IEEE Trans. Computer-Aided Design 14, 1223 (1995).

M. E. Law, “The virtual integrated circuit factory – can it be achieved?,” IEEE Circuits Devices 11, 25 (1995).

K. S. Jones, J. Lui, L. Zhang, V. Krishnamoorthy, and R. T. DeHoff, “Studies of the interactions Between (311) defects and type I and II dislocation Loops in Si⁺ implanted silicon,” Nucl. Instrum. Methods Phys. Res. B 106, 227 (1995).

K. S. Jones, H. G. Robinson, J. Listebarger, J. Chen, J. Liu, B. Herner, H. Park, M. E. Law, D. Sieloff, and J. A. Slinkman, “Studies of point defect/dislocation loop interaction processes in silicon,” Nucl. Instrum. Methods Phys. Res. B 96, 196 (1995).

J. K. Listebarger, H. G. Robinson, K. S. Jones, M. E. Law, D. D. Sieloff, J. A. Slinkman, and T. O. Sedgwick, “Study of end of range loop interactions with B⁺ implant damage using a boron doped diffusion layer,” J. Appl. Phys. 78, 2298 (1995).

H. Park, K. S. Jones, J. A. Slinkman, and M. E. Law, “The effect of hydrostatic pressure on dopant diffusion in silicon,” J. Appl. Phys. 78, 3664 (1995).

J. Liu, M. E. Law, and K. S. Jones, “Evolution of dislocation Loops in silicon in an inert ambient-I,” Solid State Electron. 38, 1305 (1995).

S. Chaudhry, J. Liu, K. S. Jones, and M.,E. Law, “Evolution of dislocation loops in silicon in an inert ambient-II,” Solid State Electron. 38, 1313 (1995).

C. M. Rouleau, C. J. Santana, K. S. Jones, and R. M. Park, “Dislocations in lattice-mismatched wide-gap II-VI/GaAs heterostructures as laser light scatterers: experiment and theory,” J. Appl. Phys. 78, 1203 (1995).

J. D. MacKenzie, C. R. Abernathy, S. J. Pearton, V. Krishnamoorthy, S. Bharatan, K. S. Jones, and R. G. Wilson, “Growth of AIN by metalorganic molecular beam epitaxy,” Appl. Phys. Lett. 67, 253 (1995).

T. E. Haynes, M. J. Antonell, C. Archie Lee, and K.S. Jones, “Composition dependence of solid-phase epitaxy in silicon-germanium alloys: experiment and theory,” Phys. Rev. B 51, 7762 (1995).

O. Dokumaci, P. Rosseau, S. Luning, V. Krishnamoorthy, K. S. Jones, and M. E. Law, “Transmission electron microscopy analysis of heavily As-doped, laser and thermally annealed layers in silicon,” J. Appl. Phys. 78, 828 (1995).

L. H. Zhang, K. S. Jones, P. H. Chi, and D. S. Simons, “Transient enhanced diffusion without {311} defects in low energy B⁺ implanted silicon,” Appl. Phys. Lett. 67, 2025 (1995).

C. R. Abernathy, J. D. MacKenzie, S. R. Bharatan, K. S. Jones, and S. J. Pearton, “Growth of In_xGa_1-xN on GaAs by metalorganic molecular beam epitaxy,” J. Vac. Sci. Technol. A 13, 716 (1995).

S. B. Herner and K. S. Jones, “Point defects in Si after formation of a TiSi₂ film: evidence for vacancy supersaturation and interstitial depletion,” Appl. Phys. Lett. 68, 1687 (1995).

C. R. Abernathy, J. D. MacKenzie, S. R. Bharatan, K. S. Jones, and S. J. Pearton, “Electrical and structural properties of In_xGa_1-xN on GaAs,” Appl. Phys. Lett. 66, 1632 (1995).