M. E. Law and S. M. Cea, “Continuum based modeling of silicon integrated circuit processing: an object oriented approach,” Comput. Mater. Sci. 12, 289 (1998).

M.-Y. Chuang, K. K. O, and M. E. Law, “Three-dimensional base distributed effects of long stripe BJT’s: AC effects on input characteristics,” IEEE Trans. Electron Devices 45, 1993 (1998).

M.-Y. Chuang, K. K. O, and M.E. Law, “Three-dimensional base distributed effects of long stripe BJT’s: base resistance at DC,” IEEE Trans. Electron Devices 45, 439 (1998).

S. B. Herner, H. J. Gossmann, F. H. Baumann, G. H. Gilmer, and D. C. Jacobson, and K. S. Jones, “Capture of vacancies by extrinsic dislocation loops in silicon,” Appl. Phys. Lett. 72, 67 (1998).

K. Moller, M. E. Law, and K. S. Jones, “Cross-sectional transmission electron microscopy analysis of {311} defects from silicon implantation into silicon,” Appl. Phys. Lett. 72, 2547 (1998).

J.-H. Li and K. S. Jones, “{311} defects in silicon: the source of the loops,” Appl. Phys. Lett. 73, 3748 (1998).

J.-H. Li, M. E. Law, C. Jasper, and K. S. Jones, “The effect of TEM sample thickness on nucleation and growth and dissolution of {311} defects in Si⁺ implanted Si,” Mater. Sci. Semicond. Process. 1, 99 (1998).

D. F. Downey, J. W. Chow, E. Ishida, and K. S. Jones, “Effect of fluorine on the diffusion of boron in ion implanted Si,” Appl. Phys. Lett. 73, 1263 (1998).

M. E. Law, Y. M. Haddara, and K. S. Jones, “Effect of the silicon/oxide interface on interstitials: di-interstitial recombination,” J. Appl. Phys. 84, 3555 (1998).

V. Krishnamoorthy, K. Moller, K. S. Jones, D. Venables, J. Jackson, and L. Rubin, “Transient enhanced diffusion and defect microstructure in high dose, low energy As⁺ implanted Si,” J. Appl. Phys. 84, 5997 (1998).